BFN26

BFN24, BFN26 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN25, BFN27 (PNP) 3 Type BFN24 BFN26 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS



2 1 VPS05161 Marking FHs FJs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BFN24 250 250 5 BFN26 300 300 5 Unit V IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 360 150 -65 ... 150 mA mW °C
210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN24, BFN26 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA BFN24 BFN26 VBEsat BFN24 BFN26 VCEsat 0.4 0.5 0.9 hFE 25 40 40 30 BFN24 BFN26 IEBO BFN24 BFN26 ICBO 20 20 100 ICBO 100 100 BFN24 BFN26 V(BR)EBO BFN24 BFN26 V(BR)CBO 250 300 5 V(BR)CEO 250 300 typ. max. Unit V nA µA nA - V 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 BFN24, BFN26 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb 1.5 fT 70 typ. max. Unit MHz pF 3 Nov-30-2001 BFN24, BFN26 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 400 10 3 MHz fT BFN 24/26 EHP00622 mW 300 P tot 250 200 10 2 150 5 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BFN 24/26 EHP00623 Operating range I C = f (VCEO) TA = 25°C, D = 0 10 3 mA BFN 24/26 EHP00624 tp D= T tp ΙC T 10 2 10 2 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 µs 100 µs 1 ms 100 ms 5 10 1 5 10 1 5 500 ms DC 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 4 Nov-30-2001 BFN24, BFN26 Collector current IC = f (VBE) VCE = 10V 10 3 mA BFN 24/26 EHP00625 Collector cutoff current ICBO = f (T A) VCB = 200V 10 4 nA BFN 24/26 EHP00626 ΙC 10 2 5 Ι CB0 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 max 10 1 5 typ 10 0 5 10 -1 0 0.5 1.0 V BE V 1.5 0 50 100 TA ˚C 150 DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 2 10 2 5 2 10 1 5 2 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC BFN 24/26 EHP00627 5 Nov-30-2001