BFN36

BFN36, BFN38 NPN Silicon High-Voltage Transistors Suitabled for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN37, BFN39 (PNP) Type BFN36 BFN38 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS



4 3 2 1 VPS05163 Marking BFN 36 BFN 38 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN36 250 250 5 BFN38 300 300 5 Unit V IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1.5 150 -65 ... 150 mA W °C
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN36, BFN38 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA hFE ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 250 300 nA 100 100 µA 20 20 100 nA 25 40 V 0.4 0.5 0.9 BFN36 BFN38 V(BR)CBO BFN36 BFN38 V(BR)EBO 250 300 5 BFN36 BFN38 ICBO BFN36 BFN38 IEBO - BFN36 BFN38 VCEsat 40 30 BFN36 BFN38 VBEsat - 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 BFN36, BFN38 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb 1.5 fT 70 typ. max. Unit MHz pF 3 Nov-30-2001 BFN36, BFN38 Total power dissipation Ptot = f(TS) Collector current I C = f (VBE) VCE = 10V 1.8 10 3 mA BFN 36/38 EHP00636 W ΙC 1.4 10 2 5 P tot 1.2 1 10 1 0.8 0.6 0.4 0.2 0 0 5 10 0 5 15 30 45 60 75 90 105 120 °C 150 TS 10 -1 0 0.5 1.0 V BE V 1.5 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BFN 36/38 EHP00245 Collector cutoff current ICBO = f (T A) VCB = 30V 10 4 nA BFN 36/38 EHP00638 D= tp T tp Ι CB0 T 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 0 max 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 typ 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 50 100 TA ˚C 150 4 Nov-30-2001 BFN36, BFN38 DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 10 2 5 BFN 36/38 EHP00639 Transition frequency fT = f (I C) VCE = 10V, f = 100MHz 10 3 MHz fT BFN 36/38 EHP00637 10 2 10 1 5 5 10 0 -1 10 5 10 0 5 10 1 5 10 ΙC 2 mA 10 3 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 ΙC 5 Nov-30-2001