BFP181

BFP181 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz

4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 Maximum Ratings Parameter Marking RFs 1=C Pin Configuration 2=E 3=B 4=E Package SOT143 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 75°C 1) mA mW °C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

430 K/W 1 Jun-21-2001 BFP181 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-21-2001 BFP181 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz |S21e|2 , 16.5 11.5 IC = 5 mA, VCE = 8 V, ZS = ZL = 50 20 16.5 Gms 1.45 1.8 F Ceb 0.32 Cce 0.27 Ccb 0.21 0.4 fT 6 8 typ. max. Unit GHz pF dB 1G ms = |S21 / S12 |
3 Jun-21-2001 BFP181 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.0010519 fA 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.082903 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.89 0.73 0.4 0.15 0 0.42 189 15 187 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-21-2001
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BFP181 Total power dissipation Ptot = f (TS ) 200 mW 160 140 120 100 80 60 40 20 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.1 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-21-2001 BFP181 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.32 pF 10.0 GHz 10V 8V 5V 8.0 0.24 7.0 Ccb 0.20 fT 6.0 3V 0.16 5.0 2V 0.12 4.0 3.0 1V 0.7V 0.08 2.0 0.04 1.0 0.0 0 0.00 0 4 8 12 16 V 22 2 4 6 8 10 12 14 mA 17 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 24 10V dB 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V 20 3V 14 12 G 2V G 18 2V 10 8 16 1V 1V 14 6 12 0.7V 0.7V 4 2 0 0 10 8 0 2 4 6 8 10 12 14 mA 18 2 4 6 8 10 12 14 mA 18 IC IC 6 Jun-21-2001 BFP181 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 22 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 22 IC=5mA dB 0.9GHz dBm 8V 18 5V 18 1.8GHz 16 14 IP 3 G 16 0.9GHz 12 10 2V 14 8 12 1.8GHz 6 4 1V 10 2 0 -2 8 6 0 2 4 6 8 V 12 -4 0 2 4 6 8 10 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) V CE = Parameter 24 dB IC=5mA IC =5mA 28 26 24 20 18 S21 G 16 14 12 10 22 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 10V 2V 1V 0.7V GHz 8 6 4 3.5 2 0.0 0.5 1.0 1.5 2.0 2.5 f 7
3V 12 14 mA 18 IC 10V 2V 1V 0.7V GHz 3.5 f Jun-21-2001