BFP181W

BFP 181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S


2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 181W Maximum Ratings Parameter Marking RFs 1=E Pin Configuration 2=C 3=E 4=B Package SOT-343 Unit V Symbol VCEO VCES VCBO VEBO IC IB 91 °C 1) Ptot Tj TA Tstg Value 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS mA mW °C
340 K/W 1 Oct-12-1999 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Oct-12-1999 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable F) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz IC = 5 mA, VCE = 8 V |S21e|2 , 16.5 11.5 IC = 5 mA, VCE = 8 V, ZS = ZL = 50 20 16.5 Gms 1.45 1.8 F Ceb 0.32 Cce 0.27 Ccb 0.24 0.4 fT 6 8 typ. max. Unit GHz pF dB 1G ms = |S21 / S12|
3 Oct-12-1999 BFP 181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.0010519 fA 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.082903 0.75 1.11 300 fA fA mA - V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-12-1999



BFP 181W Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 200 mW 160 140 TS P tot 120 100 80 60 40 20 0 0 120 °C TA 20 40 60 80 100 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Oct-12-1999 BFP 181W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.5 10 GHz pF 8 7 10V 8V 5V Ccb 0.3 fT 6 5 3V 2V 0.2 4 3 1V 0.1 2 1 0.7V 0.0 0 4 8 12 16 V 24 0 0 2 4 6 8 10 12 14 mA 17 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 24 dB 10V 3V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 20 dB 20 18 16 16 14 10V 5V 3V G G 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 mA 17 1V 0.7V 12 2V 10 8 6 4 2 0 0 14 mA 1V 0.7V 2 4 6 8 10 12 17 IC IC 6 Oct-12-1999 BFP 181W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 24 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 22 dBm 8V IC=5mA 0.9GHz 20 18 16 18 16 5V 1.8GHz 0.9GHz 14 IP 3 G 12 10 2V 14 12 10 8 6 4 2 0 0 2 4 6 8 V 1.8GHz 8 6 4 2 0 -2 -4 12 -6 1 3 5 7 9 11 13 mA 1V VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 24 dB IC=5mA dB IC =5mA 20 18 G 20 S21 16 14 12 15 10 8 10V 1V 0.7V 10V 2V 1V 0.7V 6 4 2 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 10 5 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 7  3V 17 IC GHz 3.5 f Oct-12-1999