BFP182W
NPN Silicon RF Transistor
3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz
4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP182W
Maximum Ratings Parameter
Marking RGs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 35 4 250 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 91 °C 1)
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
235
K/W
1
Aug-09-2001
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 17.5 12 IC = 10 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz
1G ms 2G ma
Symbol min. fT Ccb Cce Ceb F Gms 6 -
Values typ. 8 0.3 0.27 0.6 max. 0.45 -
Unit
GHz pF
dB 1.2 1.9 21.5 -
Gma
-
15.5
-
= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3
Aug-09-2001
BFP182W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA -
fF ps mA V ns
V deg fF -
V fF V eV K
-
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.43 0.47 0.26 0.12 0.06 0.36 68 46 232
fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
nH nH nH nH nH nH fF
BFP182W
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
BFP182W
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.5
10
GHz 10V 8V
pF
8 7
5V
Ccb
3V
0.3
fT
6
2V
5 0.2 4
1V
3
0.7V
0.1
2 1
0.0 0
4
8
12
16
V
24
0 0
5
10
15
mA
25
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
24
dB 10V 3V
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
18
dB 10V 5V
20
2V
14
3V 2V
G
G
12 10
1V
18
16
14
8 12
0.7V
1V
10
6
0.7V
8 0
5
10
15
mA
25
4 0
5
10
15
mA
25
IC
IC
6
Aug-09-2001
BFP182W
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
24
dB
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz
26
dBm
IC=10mA
0.9GHz
20 18 16
0.9GHz
22 20
IP 3
1.8GHz
G
18 16 14
2V
14
1.8GHz
12 10 8 6 4 2 0 0 2 4 6 8
V
12 10 8 6 12 4 0 5 10 15
mA 1V
VCE
Power Gain Gma , Gms = f(f)
VCE = Parameter
35
Power Gain |S21|2= f(f)
V CE = Parameter
30
IC=10mA
dB dB
IC =10mA
25
S21
20
G
20 15 15
10V
10
10V 3V
10
2V 1V
5
0.7V
5
0 0.0
0.5
1.0
1.5
2.0
2.5
GHZ
3.5
0 0.0
0.5
1.0
1.5
2.0
f
7
8V 5V
3V
25
IC
1V 0.7V
2.5
GHz
3.5
f
Aug-09-2001
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