BFP183W

BFP183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz

4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP183W Maximum Ratings Parameter Marking RHs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 58 °C 1) mA mW °C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

205 K/W 1 Aug-10-2001 BFP183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-10-2001 BFP183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 17 11 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.4 0.27 1 max. 0.6 - Unit GHz pF dB 1.2 2 21.5 - Gma - 14.5 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3 Aug-10-2001 BFP183W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA - fF ps mA V ns V deg fF - V fF V eV K - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-10-2001
nH nH nH nH nH nH fF

BFP183W Total power dissipation Ptot = f (TS ) 500 mW 400 350 300 250 200 150 100 50 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-10-2001 BFP183W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.70 pF 10.0 MHz 10V 0.60 0.55 0.50 8.0 7.0 8V 5V Ccb fT 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 V 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 3V 2V 1V 0.7V 24 5 10 15 20 25 30 35 mA 45 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 24 dB 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 dB 10V 3V 3V 20 5V 14 12 G 2V G 18 2V 10 8 16 14 6 12 1V 1V 4 2 0 0 0.7V 10 0.7V 8 0 5 10 15 20 25 30 35 mA 45 5 10 15 20 25 30 35 mA 45 IC IC 6 Aug-10-2001 BFP183W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 24 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 28 IC=15mA 0.9GHz dBm 20 18 16 0.9GHz 24 5V 22 1.8GHz G IP 3 14 12 10 8 6 1.8GHz 20 3V 18 16 14 12 2V 4 2 0 0 2 4 6 8 V 10 8 0 1V 12 4 8 12 16 20 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) V CE = Parameter 35 IC=15mA dB dB IC =15mA 25 25 G 20 S21 20 15 10V 15 10 2V 1V 0.7V 10 10V 2V 1V 0.7V 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0 0.0 0.5 1.0 1.5 2.0 f 7
8V 24 28 32 mA 38 IC 2.5 GHz 3.5 f Aug-10-2001