BFP193W

BFP193W NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz


4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP193W Maximum Ratings Parameter Marking RCs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature Thermal Resistance TS 66 °C 1) mA mW °C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1
Junction - soldering point 2)
RthJS 145 K/W Aug-09-2001 BFP193W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFP193W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 15 9 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Symbol min. fT Ccb Cce Ceb F Gma 6 - Values typ. 8 0.63 0.33 1.8 max. 0.9 - Unit GHz pF dB 1.3 2.1 - 19.5 13 - = |S21 / S12 | (k-(k2-1)1/2)  3 Aug-09-2001 BFP193W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.11 300 fA fA mA - fF ps V deg fF - V fF V eV K mA V ns - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001
  BFP193W Total power dissipation Ptot = f (TS ) 600 mW 500 450 P tot 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFP193W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.6 pF 10 GHz 8 1.2 7 8V 5V Ccb 1.0 fT 6 3V 0.8 5 2V 0.6 4 3 1V 0.7V 0.4 2 0.2 1 0 0 0.0 0 4 8 12 16 V 24 10 20 30 40 50 60 70 80 mA 95 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 dB 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 dB 10V 12 18 5V 3V 11 10 3V 2V G G 2V 16 9 8 7 14 12 1V 6 1V 5 4 3 0.7V 10 0.7V 8 2 1 6 0 10 20 30 40 50 60 70 80 mA 95 0 0 10 20 30 40 50 60 70 mA 85 IC IC 6 Aug-09-2001 BFP193W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 22 dB 0.9GHz Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 34 dBm IC=30mA 18 16 0.9GHz 30 5V 28 G 14 12 10 8 6 4 2 0 0 2 4 6 8 IP 3 1.8GHz 26 24 1.8GHz 22 2V 20 18 16 1V 14 V 12 12 0 10 20 30 40 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) V CE = Parameter 35 dB IC=30mA dB IC =30mA 25 25 G 20 15 15 10 10 10V 1V 0.7V 10V 2V 1V G 20 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 -5 0.0 0.5 1.0 1.5 2.0 f 7
8V 3V 50 60 mA 80 IC 0.7V 2.5 GHz 3.5 f Aug-09-2001