BFP196

BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz F = 1.5 dB at 900 MHz


4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP196 Maximum Ratings Parameter Marking RIs 1=C Pin Configuration 2=E 3=B 4=E Package SOT143 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 100 12 700 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 77 °C 1) mA mW °C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

105 K/W 1 Jun-22-2001 BFP196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFP196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 12.5 6.5 IC = 50 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 16 10 F 1.5 2.5 Ceb 3.7 Cce 0.3 Ccb 0.97 1.4 fT 5 7.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )
3 Jun-22-2001 BFP196 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.7264 20 1.1766 3.8128 0.88299 1 13.325 23.994 1.9775 0.73057 2.2413 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.4294 10.584 0.019511 1.2907 0.75103 0.7308 0.44322 0 0.3289 0 0 0.50922 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80012 119.22 0.94288 4.8666 0.084011 0.27137 0.33018 0.1 1667 0.29998 0.75 1.11 300 fA fA mA - V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.84 0.65 0.31 0.14 0.07 0.42 145 19 281 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-22-2001
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BFP196 Total power dissipation Ptot = f (TS ) 800 mW 600 P tot 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-22-2001 BFP196 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.8 pF 8.0 10V GHz 5V 3V 1.4 6.0 2V Ccb fT 1.2 1.0 5.0 4.0 0.8 3.0 0.6 0.4 0.2 0.0 0 2.0 1V 0.7V 1.0 4 8 12 16 V 22 0.0 0 20 40 60 80 mA 120 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V dB 10V 5V 3V 8 7 2V 14 G G 2V 6 5 1V 12 4 10 1V 3 0.7V 2 8 0.7V 1 0 0 6 0 20 40 60 80 mA 120 20 40 60 80 mA 120 IC IC 6 Jun-22-2001 BFP196 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 36 dBm 8V IC=50mA 0.9GHz 32 14 0.9GHz 5V 30 IP 3 12 28 3V G 10 8 1.8GHz 26 24 2V 1.8GHz 22 20 18 16 1V 6 4 2 0 0 14 2 4 6 8 V 12 12 0 20 40 60 Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 32 IC=50mA dB IC =50mA 24 24 S21 20 16 G 20 16 12 12 8 8 10V 2V 1V 0.7V 4 0 -4 0.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0.5 1.0 1.5 2.0 f 7
80 100 mA 130 IC 10V 2V 1V 0.7V 2.5 GHz 3.5 f Jun-22-2001