BFP196W

BFP196W NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz F = 1.5 dB at 900 MHz


4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP196W Maximum Ratings Parameter Marking RIs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 100 12 700 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 69 °C 1) mA mW °C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

115 K/W 1 Jun-22-2001 BFP196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFP196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 12.5 6.5 IC = 50 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 17.5 11.5 F 1.5 2.5 Ceb 3.7 Cce 0.36 Ccb 1 1.4 fT 5 7.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )
3 Jun-22-2001 BFP196W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.7264 20 1.1766 3.8128 0.88299 1 13.325 23.994 1.9775 0.73057 2.2413 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.4294 10.584 0.019511 1.2907 0.75103 0.7308 0.44322 0 0.3289 0 0 0.50922 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80012 119.22 0.94288 4.8666 0.084011 0.27137 0.33018 0.1 1667 0.29998 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-22-2001
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BFP196W Total power dissipation Ptot = f (TS ) 800 mW 600 P tot 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-22-2001 BFP196W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 2.0 pF 7.5 GHz 10V 5V 3V 1.6 1.4 6.0 5.5 2V Ccb 1.2 1.0 0.8 0.6 0.4 0.2 fT 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.7V 1V 0.0 0 4 8 12 16 V 22 0.0 0 20 40 60 80 mA 120 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 dB 8V 3V 8V 3V 2V 18 17 16 10 2V G 15 14 13 7 12 11 10 0.7V 1V 1V G 9 8 6 5 0.7V 9 8 0 20 40 60 80 mA 120 4 0 20 40 60 80 mA 120 IC IC 6 Jun-22-2001 BFP196W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 38 IC=50mA dB 0.9GHz dBm 8V 34 14 12 0.9GHz 1.8GHz 32 G IP 3 30 28 26 3V 10 8 6 4 2 0 0 1.8GHz 24 22 20 18 16 1 2 3 4 5 6 7 8 V 1V 2V 10 14 0 20 40 60 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 32 IC=50mA dB IC =50mA 28 26 24 24 S21 G 22 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 8V 1V 0.7V GHz 20 16 12 8 4 8V 0 -4 0.0 3.5 0.5 1.0 1.5 2.0 f 7
5V 80 mA 120 IC 1V 0.7V 2.5 GHz 3.5 f Jun-22-2001