BFP405

SIEGET 25 NPN Silicon RF Transistor BFP405 3 For low current applications For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability 
4 SIEGET 25 GHz f T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP405 Maximum Ratings Parameter Marking ALs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg Value 4.5 15 1.5 12 1 55 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 120°C 1) Thermal Resistance Junction - soldering point 2) RthJS
520 1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1






2 1 VPS05605 Package SOT343 Unit V mA mW °C K/W Aug-20-2001 SIEGET 25 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V V(BR)CEO ICBO IEBO hFE 4.5 50 5 90 Symbol min. Values typ. BFP405 AC characteristics (verified by random sampling) Transition frequency fT IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gms Power gain 1) IC = 5 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 5 mA, VCE = 2 V, f = 1.8 MHz, ZS = ZL = 50 Third order intercept point IP3 IC = 5 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point P-1dB IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL =ZLopt 18 - 25 0.05 0.24 0.29 1.25 - 23 14 18 - 15 - 5 1G ms = |S21 / S12 | 2 Aug-20-2001
Unit max. V nA µA - 150 15 150 0.1 - GHz pF dB - -
- dBm - SIEGET 25 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BFP405 IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM V deg fF - 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 - V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = CBE = CCB = CCE = 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Aug-20-2001
IS = 2 fA N= 1.02 - RS = 20 nH nH nH nH nH nH fF fF fF 
1.0405 15.761 0.96647 0.037223 0.21215 0.12691 fA fA mA

SIEGET 25 For non-linear simulation: BFP405 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4
      Aug-20-2001 SIEGET 25 BFP405 Total power dissipation Ptot = f (TS ) Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 100 mW 30 GHz 1.5 to 4 80 70 24 22 P tot 20 60 50 40 30 20 10 0 0 120 °C fT 18 16 14 12 10 8 6 4 2 0.5 20 40 60 80 100 150 0 0 2 4 6 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 1 Ptotmax / PtotDC RthJS K/W - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -6 10 -5 10 -4 tp 5
1 0.75 8 10 mA 14 IC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 -2 s 10 0 tp Aug-20-2001 SIEGET 25 BFP405 Power gain Gma, Gms , |S21 |2 = f (f) VCE = 2 V, IC = 5 mA 40 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 32 dB 0.9 32 24 28 G G 24 20 16 12 8 4 0 0.0 20 16 12 Gm |S2 8 4 1.0 2.0 3.0 4.0 GHz 6.0 0 0 2 4 6 f Power gain Gma,Gms = f (VCE ) IC=5mA f = parameter in GHz 30 GHz 0.9 Collector-base capacitance Ccb = f (VCB) f = 1MHz 0.30 pF 24 22 20 1.8 2.4 3 4 5 G 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V Ccb 0.20 0.15 6 0.10 0.05 4.5 0.00 0.0 0.5 1.0 1.5 2.0 VCE 6
1.8 2.4 3 4 5 6 8 10 mA 14 IC 2.5 3.0 V 4.0 VCB Aug-20-2001 SIEGET 25 BFP405 Noise figure F = f (IC ) VCE = 2 V, ZS = ZSopt 4.0 dB Noise figure F = f (IC) VCE = 2 V, f = 1.8 GHz 4.0 dB 3.0 3.0 2.5 2.5 F 2.0 F 2.0 1.5 1.5 1.0 0.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 2 4 6 8 mA 1.0 0.5 0.0 0 12 0.0 0 2 4 6 IC Noise figure F = f ( f ) VCE = 2 V, ZS = ZSopt 3.0 Source impedance for min. Noise Figure versus Frequency VCE = 2V, I C = 2mA / 5 mA +j50 dB +j25 +j10 2.0 4GHz 5GHz 3GHz 1.8GHz 0.9GHz 6GHz F 1.5 0 10 25 50 1.0 IC = 5 mA IC = 2 mA -j10 0.5 -j25 -j50 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f 7
ZS = 50 Ohm ZS = ZSopt 8 mA 12 IC +j100 100 2mA 5mA -j100 Aug-20-2001