BFP405_09

BFP405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP405 Maximum Ratings Parameter Marking ALs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO 4.5 4.1 VCES VCBO VEBO IC IB Ptot Tj TA T stg 15 15 1.5 25 1 75 150 Package SOT343 Value Unit V - Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108 °C Junction temperature Ambient temperature Storage temperature 1T mA mW °C -65 ... 150 -65 ... 150 S is measured on the collector lead at the soldering point to the pcb 2009-11-06 1 BFP405 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 555 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4.5 60 Values typ. 5 95 max. 10 100 1 130 Unit V µA nA µA - calculation of RthJA please refer to Application Note Thermal Resistance 2009-11-06 2 BFP405 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 5 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 5 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output2) VCE = 2 V, I C = 5 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 5 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 2IP3 18 - 25 0.05 0.1 GHz pF Ccb Cce - 0.24 - Ceb - 0.29 - F G ms - 1.25 23 - dB dB |S21| 2 14 18.5 - IP 3 - 15 - dBm P-1dB - 5 - ms = |S21 / S12| value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 2009-11-06 3 BFP405 Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models . Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 12GHz using typical devices. The BFP405 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. 2009-11-06 4 BFP405 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 100 mW 10 3 80 Ptot 60 50 40 30 20 10 0 0 120 °C RthJS K/W 70 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 20 40 60 80 100 150 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 Ts tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 1 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.3 Ptotmax /PtotDC pF - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CCB -2 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 s 10 0 0 0 0.5 1 1.5 2 2.5 3 V 4 tp VCB 2009-11-06 5 BFP405 Transition frequency fT= ƒ(IC) f = 2 GHz VCE = parameter in V 26 GHz 4V 3V 2V Power gain Gma, Gms , |S 21|2 = ƒ (f) VCE = 3 V, I C = 5 mA 44 dB 22 20 1.5V 36 32 28 Gms fT 18 16 14 12 10 8 6 4 0 4 8 12 16 0.5V 1V G 24 20 16 12 8 4 22 0 0 1 |S21|² Gma mA 2 3 4 5 6 7 8 GHz 10 IC f Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter in GHz 40 dB 0.15GHz Power gain Gma, Gms = ƒ (VCE) IC = 5 mA f = parameter in GHz 40 dB 0.15GHz 32 28 0.45GHz 0.9GHz 1.5GHz 1.9GHz 2.4GHz 3.5GHz 5.5GHz 32 28 0.45GHz 0.9GHz 1.5GHz 2.4GHz G 20 16 12 8 G 24 24 20 16 12 8 3.5GHz 5.5GHz 10GHz 10GHz 4 0 0 mA 4 0 0 V 4 8 12 16 20 26 1 2 3 4 6 IC VCE 2009-11-06 6 BFP405 Noise figure F = ƒ(IC ) VCE = 2 V, ZS = ZSopt 4 dB Noise figure F = ƒ(I C) VCE = 2 V, f = 1.8 GHz 4 dB 3 3 F 2 F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 2 4 6 8 mA 2.5 2.5 2 1.5 1.5 1 1 ZS = 50 Ohm ZS = ZSopt 0.5 0.5 0 0 12 0 0 2 4 6 8 mA 12 IC IC Noise figure F = ƒ(f) VCE = 1 V, ZS = ZSopt 3 Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 2 mA / 5 mA +j50 dB +j25 +j100 +j10 2 4GHz 5GHz 3GHz 1.8GHz 0.9GHz F 1.5 0 10 25 6GHz 50 100 1 IC = 5 mA IC = 2 mA -j10 2mA 5mA 0.5 -j25 -j50 -j100 0 0 1 2 3 4 GHz 6 f 2009-11-06 7 Package SOT343 BFP405 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2009-11-06 8 BFP405 Edition 2009-11-05 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2009. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2009-11-06 9