BFP410

BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP410 Parameter Marking AKs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package SOT343 Value Unit - Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage TA = 25 °C TA = -55 °C V 4.5 4.1 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 100 °C VCES VCBO VEBO IC IB Ptot TJ TA T Stg 13 13 1.5 40 6 150 150 -55 ... 150 -55 ... 150 mW °C mA Junction temperature Ambient temperature Storage temperature 1T S is measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) 335 K/W 2010-04-09 1 BFP410 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling) Collector-base cutoff current VCB = 2 V, I E = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 13 mA, VCE = 2 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 60 4.5 Values typ. 5 max. - Unit V nA 1 2 1 0.001 95 30 50 30 0.6 130 µA - calculation of RthJA please refer to Application Note Thermal Resistance 2010-04-09 2 BFP410 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 20 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 2 GHz, ZS = ZL = 50 Ω Third order intercept point at output 2) VCE = 2 V, I C = 20 mA, f = 2 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 2 GHz 1G 2IP3 18 - 25 0.09 0.17 GHz pF Ccb Cce - 0.35 - Ceb - 0.45 - F G ms - 1.2 21.5 - dB dB |S21| 2 - 18.5 - IP 3 - 23.5 - dBm P-1dB - 10.5 - ms = |S21 / S12| value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 2010-04-09 3 BFP410 Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.3 180 mW pF 140 Ptot 100 0.15 80 60 40 0.05 20 0 0 0 0 0.1 CCB 120 0.2 20 40 60 80 100 120 °C TS 160 0.5 1 1.5 2 2.5 3 V 4 VCB Transition frequency fT = ƒ(IC) f = 2 GHz VCE = parameter in V 26 GHz 3 to 4V 2V 1V Power gain Gma, Gms , |S 21|2 = ƒ (f) VCE = 2 V, I C = 13 mA 45 dB 22 20 18 35 30 fT 16 14 12 10 8 6 4 2 0 4 8 12 16 20 24 mA 0.5V G 25 20 15 Gms |S21|² Gma 10 5 0 0 32 2 4 6 GHz 10 IC f 2010-04-09 4 BFP410 Power gain Gma, Gms = ƒ (I C) VCE = 2V f = parameter in GHz 40 dB 0.15GHz Power gain Gma, Gms = ƒ (VCE) IC = 13 mA f = parameter in GHz 40 dB 0.15GHz 32 28 24 20 16 12 8 4 0 0 0.45GHz 0.9GHz 1.5GHz 1.9GHz 2.4GHz 3.5GHz 5.5GHz 10GHz 32 28 24 20 16 12 8 4 0.45GHz 0.9GHz 1.5GHz 1.9GHz 2.4GHz 3.5GHz 5.5GHz 10GHz G G 4 8 12 16 20 24 28 mA 36 0 0 1 2 3 4 V 6 IC VCE Noise figure F = ƒ(IC ) VCE = 2 V, Z S = ZSopt 4.5 dB Noise figure F = ƒ(I C) VCE = 2 V, f = 2 GHz 4 dB 3.5 3 Fmin 3 2.5 2 2 1.5 1.5 1 0.5 0 0 f= 10.0 GHz f= 5.5 GHz f= 2.4 GHz f= 1.8 GHz f= 0.9 GHz f= 0.45 GHz 4 8 12 16 20 24 mA 30 F 2.5 1 ZS=50Ohm ZS=ZSopt 0.5 0 0 4 8 12 16 mA 24 IC IC 2010-04-09 5 BFP410 Collector current I C = ƒ(VBE) VCE =2 V 10 2 mA 10 1 Collector current I C = ƒ(VCE) Parameter IB 25 mA 160µA 10 0 IC IC 10 -1 15 90µA 10 10 -2 10 -3 5 20µA 10 -4 0.2 0.4 0.6 0.8 V 1.2 0 0 1 2 3 V 5 VBE VCE DC current gain hFE = ƒ(IC) VCE =2 V 10 3 Base current reverse IB = ƒ(VEB) 10 0 µA 10 -1 hFE 10 2 10 -2 IB 10 1 10 0 -1 10 0 1 10 -3 10 -4 10 10 mA 10 2 10 -5 0 0.5 1 V 2 IC VEB 2010-04-09 6 Package SOT343 BFP410 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2010-04-09 7 BFP410 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-04-09 8