BFP450

SIEGET 25 NPN Silicon RF Transistor BFP450 3 For medium power amplifiers Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz Transition frequency f T = 24 GHz Gold metallization for high reliability 
4 SIEGET 25 GHz f T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP450 Maximum Ratings Parameter ANs 1=B 2=E 3=C 4=E Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg Value 4.5 15 1.5 100 10 450 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 96 °C 1) Thermal Resistance Junction - soldering point 2) RthJS
120 1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1





2 1 VPS05605 SOT343 Unit V mA mW °C K/W Aug-20-2001 SIEGET 25 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 4 V V(BR)CEO ICBO IEBO hFE 4.5 50 5 80 Symbol min. Values typ. BFP450 AC characteristics (verified by random sampling) Transition frequency fT IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gma Power gain, maximum available 1) IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 50 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point IP3 IC = 50 mA, VCE = 3 V, ZS=ZSopt , ZL =ZLopt , f = 1.8 GHz 1dB Compression point P-1dB IC = 50 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL =ZLopt 1G 2 1/2 ma = |S21 / S12 | (k-(k -1) ) 15 - 24 17 0.48 1.2 1.75 1.25 - 15.5 8 11.5 - 29 - 19 2
Unit max. V nA µA - 600 100 150 GHz 0.8 dB pF - -
- dBm - Aug-20-2001 SIEGET 25 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BFP450 IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.13125 24.165 1.5563 13.461 0.70543 2.1659 3.2276 7.5068 0.017655 1.1487 2.6912 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 76.123 0.58905 21.254 0.25878 5.403 0.45346 0.95292 0.69972 0 0.50644 0 0 0.91274 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM V deg F - 0.48672 0.66148 1049.5 0.28285 0.75 1.11 300 - V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: C CB L BI = L BO = L EI = C C’-E’Diode C CE 0.31 0.63 0.2 0.05 0.29 0.68 208 3.2 213 L BO B L BI B’ Transistor Chip E’ C’ L CI L CO L EO = L CI = L CO = CBE = CCB = CCE = C BE L EI L EO E EHA07389 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Aug-20-2001
IS = 25 fA N= 1.05 - RS = 5 nH nH nH nH nH nH fF fF fF

0.79652 28.341 1.2966 0.012292 0.013181 0.50084 fA fA mA

SIEGET 25 For non-linear simulation: BFP450 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4
      Aug-20-2001 SIEGET 25 BFP450 Total power dissipation Ptot = f (TS ) Transition frequency fT = f (IC) f = 1 GHz VCE = parameter in V 500 mW 28 GHz 2 to 4 1.5 1 0.75 24 400 350 22 20 P tot 300 250 200 fT 18 16 14 12 10 0.5 150 100 50 0 0 120 °C 8 6 4 2 20 40 60 80 100 150 0 0 20 40 60 80 mA TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 1 K/W Ptotmax / PtotDC RthJS 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 tp 5
120 IC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 -2 s 10 0 tp Aug-20-2001 SIEGET 25 BFP450 Power gain Gma, Gms , |S21 |2 = f ( f ) VCE = 2V, IC = 50 mA 48 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 28 dB 40 36 24 22 20 32 G 28 24 20 16 12 8 4 0 0.0 G Gms 18 16 14 12 10 8 1.8 2.4 3 4 5 6 G ma |S21|2 6 4 2 1.0 2.0 3.0 4.0 GHz 6.0 0 0 20 40 60 f Power gain Gma, Gms = f (VCE) IC = 50 mA f = Parameter in GHz 26 dB 0.9 Collector-base capacitance Ccb = f (VCB) f = 1MHz 1.2 22 20 18 pF G 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 1.8 2.4 Ccb 0.8 0.6 3 4 0.4 5 6 0.2 4.5 0.0 0.0 0.5 1.0 1.5 2.0 VCE 6
0.9 80 mA 120 IC 2.5 3.0 V 4.0 VCB Aug-20-2001 SIEGET 25 BFP450 Noise figure F = f (IC ) VCE = 2 V, ZS = ZSopt 3.0 Noise figure F = f (IC) VCE = 2 V, f = 1.8 GHz 4.5 dB dB 3.5 2.0 3.0 F F 2.5 1.5 2.0 1.0 0.5 f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.5 1.0 0.5 0.0 0 10 20 30 40 50 60 70 80 mA 100 0.0 0 10 20 30 40 50 IC Noise figure F = f ( f ) VCE = 2 V, ZS = ZSopt 3.0 Source impedance for min. Noise Figure versus Frequency VCE = 2 V, IC = 10 mA / 50 mA +j50 dB +j25 +j10 2.0 F 1.8GHz 0.9GHz 1.5 0 10 25 2.4GHz 50 1.0 3GHz IC = 50 mA IC = 10 mA 0.5 -j10 4GHz -j25 -j50 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 GHz 4.5 f 7
ZS = 50Ohm ZS = ZSopt 60 70 80 mA 100 IC +j100 100 10mA 50mA -j100 Aug-20-2001