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BFP460

BFP460

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BFP460 - NPN Silicon RF Transistor - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BFP460 数据手册
BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard package with visible leads • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP460 Maximum Ratings Parameter Marking Pin Configuration ABs 1 = E 2 = C 3 = E 4=B Symbol VCEO Package SOT343 Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C V 4.5 4.2 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 92°C VCES VCBO VEBO IC IB Ptot TJ TA T Stg 15 15 1.5 70 7 230 150 -65 ... 150 -65 ... 150 mW °C mA Junction temperature Ambient temperature Storage temperature 1T S is measured on the collector lead at the soldering point to the pcb 2010-05-17 1 BFP460 Thermal Resistance Parameter Symbol RthJS Value ≤ 250 Unit Junction - soldering point 1) K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85°C Verified by random sampling Collector-base cutoff current VCB = 2 V, I E = 0 VCB = 5 V, I E = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain VCE = 3 V, I C = 20 mA , pulse measured 1For V(BR)CEO ICES 4.5 5.8 - V nA ICBO IEBO hFE 90 1 2 1000 30 40 1 1 120 30 30 500 160 - calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2010-05-17 2 BFP460 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) 16 22 GHz Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz NFmin 0.7 1.1 1.2 dB Ceb 0.55 Cce 0.28 Ccb 0.32 0.45 pF 2010-05-17 3 BFP460 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Maximum power Gain1) G max IC = 3 mA, VCE = 1.5 V, ZS = ZSopt,ZL = ZLopt, f = 100 MHz IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1,8 GHz f = 3 GHz Transducer gain IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω, f = 100 MHz IC = 20 mA, VCE = 3 V, Z S = ZL = 50Ω , f = 1.8 GHz f = 3 GHz Third order intercept point at output 2) VCE = 3 V, I C = 20 mA, f = 100 MHz VCE = 3 V, I C = 20 mA, f = 1.8 GHz 1dB compression point at output VCE = 3V, IC = 20mA , ZS=ZL = 50Ω, f = 100 MHz VCE = 3V, IC = 20mA, ZS=ZL = 50Ω, f = 1.8 GHz VCE = 3V, IC = 35mA, ZS=ZL = 50Ω, f = 1.8 GHz 1G dB 26.5 17.5 12.5 dB 20 15 10.5 23.5 27.5 9.5 11.5 13 dBm - |S 21e|2 IP 3 P-1dB - 1/2 ma = |S 21 / S12 | (k-(k²-1) ), Gms = S 21 / S12  2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 2010-05-17 4 BFP460 Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 260 V 220 200 0.7 pF 160 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 A 150 CCB 0.4 0.3 0.2 0.1 0 0 180 0.5 2 4 6 8 10 V 14 VCB Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 1800MHz 33 dBm 29 27 25 4V 3V Transition frequency fT = ƒ(IC) f = 1 GHz VCE = parameter 24 GHz 2V 3-4V 20 18 1V IP3 fT 23 21 19 17 15 13 11 9 7 5 0 10 20 30 40 mA 2V 16 14 12 10 1V 8 6 4 0 mA 55 10 20 30 40 60 IC IC 2010-05-17 5 BFP460 Power gain Gma, Gms , |S 21|2 = ƒ (f) VCE = 3 V, I C = 20 mA 50 dB Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter in GHz 24 dB 0.9 40 35 30 25 20 15 10 5 0 0 GHz |S21|² Gma Gms 20 18 1.8 16 14 12 10 8 6 4 0 mA 2.4 3 4 5 6 G 1 2 3 4 6 G 10 20 30 40 60 f IC Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz 24 dB 0.9 Noise figure F = ƒ(I C) VCE = 2 V, f = parameter ZS = ZSopt 20 18 16 2.4 1.8 G 14 3 12 10 8 6 4 0.5 V 4 5 6 1 1.5 2 2.5 3 3.5 4.5 VCE 2010-05-17 6 BFP460 Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 100MHz 32 dBm Noise figure F = ƒ(f) VCE = 2V, ZS = ZSopt , I C = parameter 24 IP3 20 16 12 1.5V 2V 2.5V 3V 4V 8 4 0 0 10 20 30 40 50 60 mA IC 80 Source impedance for min. noise figure vs. frequency VCE = 2V, IC = parameter 2010-05-17 7 BFP460 SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP460 SPICE model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFP460 SPICE model reflects the typical DC- and RF-performance with high accuracy. 2010-05-17 8 Package SOT343 BFP460 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2010-05-17 9 BFP460 Datasheet Revision History: 17 May 2010 This datasheet replaces the revision from 14 August 2008. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 14 August 2008 Page Subject (changes since last revision) 1 Maximum ratings for collector current ICmax, base current IBmax and total power dissipation Ptot increased 2 Typical values for leakage currents included, maximum leakage current values reduced 3 Noise description at 100 MHz added 4 Gain and linearity description at 100 MHz added 5-7 Curves for IP3 and noise at 100 MHz added 2010-05-17 10 BFP460 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-05-17 11
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