BFP520_10

BFP520 NPN Silicon RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V V cc with enough external collector resistance. • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz • Finds usage e.g. in cordless phones and satellite receivers • Pb-free (RoHS compliant) standard package with visible leads • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520 Parameter Marking APs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package SOT343 Value Unit - Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage TA = -55 °C V 2.5 2.4 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 105 °C VCES VCBO VEBO IC IB Ptot TJ T Stg 10 10 1 40 4 100 150 -55 ... 150 mW °C mA Junction temperature Storage temperature 1T S is measured on the emitter lead at the soldering point to pcb 2010-08-16 BFP520 Thermal Resistance Parameter Symbol RthJS Value ≤ 450 Unit Junction - soldering point1) K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 2 V, V BE = 0 VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 70 2.5 Values typ. 3 max. 3.5 Unit V nA 1 100 110 30 1000 30 3000 170 - calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2010-08-16 BFP520 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, I C = 7 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 7 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 1G 32 - 45 0.07 0.13 GHz pF Ccb Cce - 0.3 - Ceb - 0.33 - NFmin - 0.95 - dB Gms - 24 - dB |S21|2 - 21.5 - IP3 P-1dB 12 5 25 17 - dBm ms = |S21 / S12 | 2010-08-16 BFP520 Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 120 mW 0.3 100 90 pF Ptot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 CCB 0.2 0.15 0.1 0.05 0 0 0.5 1 1.5 2 V 3 TS VCB Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 900 MHz Transition frequency fT= ƒ(IC) f = 2 GHz VCE = parameter in V 52 GHz 2 44 40 1 36 fT 32 28 24 20 16 12 8 4 0 0 5 10 15 20 25 30 0.5 0.75 35 mA 45 IC 2010-08-16 BFP520 Power gain Gma, Gms, |S 21|2 = ƒ (f) VCE = 2 V, I C = 20 mA 44 dB Power gain Gma, Gms = ƒ (I C) VCE = 2V f = parameter in GHz 32 dB 0.9 36 32 28 24 16 20 16 12 8 4 4 0 0 1 2 3 4 GHz |S21|² Gma 4 5 6 Gms 24 1.8 2.4 G G 20 3 12 8 6 0 0 5 10 15 20 25 30 35 mA 45 f IC Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz 32 dB 0.9 Minimum noise figure NF min = ƒ(IC) VCE = 2 V, ZS = ZSopt 3 dB 24 1.8 2.4 2 G 16 4 5 F 1.5 20 3 12 6 1 8 0.5 4 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 0 0 0.5 1 1.5 2 V 3 0 0 5 10 15 20 25 30 mA 40 VCE IC 2010-08-16 BFP520 Noise figure F = ƒ(I C) VCE = 2 V, f = 1.8 GHz 3 Minimum noise figure NF min= ƒ(f) VCE = 2 V, ZS = ZSopt 3 dB dB 2 2 F 1.5 F 1.5 1 Zs = 50Ohm Zs = Zsopt 1 0.5 0.5 IC = 5 mA IC = 2 mA 0 0 5 10 15 20 25 30 mA 40 0 0 1 2 3 4 5 GHz 6.5 IC f Source impedance for min. noise figure vs. frequency VCE = 2 V, I C = 2 mA / 5 mA +j50 +j25 +j100 +j10 3GHz 4GHz 5GHz 1.8GHz 0.9GHz 6GHz 0 10 25 50 100 0.45GHz 2mA 5mA -j10 -j25 -j50 -j100 2010-08-16 BFP520 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP520 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP520 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 2010-08-16 Package SOT343 BFP520 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.6 +0.1 -0.05 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2010-08-16 BFP520 Datasheet Revision History: 16 August 2010 This datasheet replaces the revision from 30 March 2007 and 28 June 2010. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revisions: 30 March 2007 and 28 June 2010 Page Subject (changes since last revision) 1 2 4 7 Feature list updated Typical values for leakage currents included, values for maximum leakage currents reduced OIP3 characteristic added SPICE model parameters removed from the datasheet, link to the respective internet site added 2010-08-16 BFP520 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-08-16