BFP620

BFP620 NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineon's reliable high volume SiGe:C technology • Ideal for CDMA and WLAN applications • Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application • Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz • Accurate SPICE GP model enables effective design in process • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620 Marking R2s 1=B 2=E Pin Configuration 3=C 4=E - Package SOT343 1 2010-09-21 BFP620 Maximum Ratings Parameter Symbol VCEO Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C V 2.3 2.1 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 95 °C VCES VCBO VEBO IC IB Ptot TJ TA TStg 7.5 7.5 1.2 80 3 185 150 -65 ... 150 -65 ... 150 mW °C mA Junction temperature Ambient temperature Storage temperature 1T S is measured on the emitter lead at the soldering point to pcb Thermal Resistance Parameter Symbol RthJS Value ≤ 300 Unit Junction - soldering point1) K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 VCE = 5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 1.5 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 110 2.3 Values typ. 2.8 max. - Unit V µA 0.001 1 10 180 10 0.04 40 900 270 nA calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2 2010-09-21 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 5 mA, VCE = 1.5 V, f=1.8GHz ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f= 6GHz ZS = ZSopt Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, f = 1.8GHz , ZS = ZSopt, ZL = ZLopt Power gain, maximum available IC = 50 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt, ZL = ZLopt Transducer gain IC = 50 mA, VCE =1.5 V, ZS=ZL=50 Ω f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 2 V, IC = 50 mA, ZS =ZL =50 Ω, f=1.8GHz 1dB compression point at output IC = 50 mA, VCE = 2 V, ZS =ZL=50 Ω, f=1.8 GHz 1G Unit max. 0.2 GHz pF typ. 65 0.12 fT Ccb - Cce - 0.22 - Ceb - 0.46 - NFmin Gms 0.7 1.3 21.5 - dB dB Gma - 11 - dB |S21e|2 IP3 P-1dB 20 9.5 25.5 14.5 - dB dBm ms = |S 21 / S12 | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2010-09-21 BFP620 Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 200 mW 10 3 160 K/W RthJS 140 Ptot 120 100 80 60 40 20 0 0 10 2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 20 40 60 80 100 120 °C 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 TS tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 1 Collector-base capacitance Ccb = ƒ(VCB ) f = 1MHz 0.4 pF P totmax/ PtotDC 0.3 CCB -4 -3 -2 D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 10 10 °C 10 0 0 0 1 2 3 4 5 V 7 tp VCB 4 2010-09-21 BFP620 Third order Intercept Point IP3=ƒ(IC) (Output, ZS = ZL=50 Ω) VCE = parameter, f = 900MHz 27 dBm 2.3V Third order Intercept Point IP3 = ƒ(IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = parameter 21 18 15 12 0.8V 1.8V IP3 1.3V 9 6 3 0 0 10 20 30 40 50 60 70 80 mA 100 IC Transition frequency fT= ƒ(IC) ƒ = 1 GHz Power gain Gma, Gms = ƒ(f) |S21|2 = ƒ (f) VCE = 1.5 V, IC = 50 mA 55 dB 1.3 to 2.3 VCE = parameter in V 65 GHz 55 50 45 1 45 40 35 30 Gms 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 mA 100 0.3 0.5 0.8 G 40 fT 25 20 15 10 5 0 |S21|² Gma 1 2 3 4 GHz 6 IC f 5 2010-09-21 BFP620 Power gain Gma, Gms = ƒ(IC) VCE = 1.5V f = parameter in GHz 30 dB dB Power gain Gma, Gms = ƒ(VCE) IC = 50 mA f = parameter in GHz 30 0.9 0.9 26 24 22 20 18 16 14 12 10 8 0 10 20 30 40 50 60 1.8 20 2.4 3 G G 1.8 15 4 5 6 2.4 3 4 5 6 10 5 0 70 mA 90 -5 0.2 0.6 1 1.4 1.8 V 2.6 IC VCE Minimum noise figure NFmin = ƒ(IC) VCE = 2 V, ZS = ZSopt Minimum noise figure NFmin = ƒ(f) VCE = 2 V, ZS = ZSopt 6 2010-09-21 BFP620 Source impedance for min. noise figure vs. frequency VCE = 2 V, IC = 6 mA / 50 mA 7 2010-09-21 BFP620 SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP620 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP620 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2010-09-21 Package SOT343 BFP620 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.6 +0.1 -0.05 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 9 2010-09-21 BFP620 Datasheet Revision History: 21 September 2010 This datasheet replaces the revision from 20 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision 20 April 2007 Page Subject (changes since last revision) 2 5 7 Typical values for leakage currents included, values for maximum leakage currents reduced @ 2400 MHz OIP3 curves added charts added describing noise figure 10 2010-09-21 BFP620 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-09-21