BFP640ESD

BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP640ESD BFP640ESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 1.0, 2010-06-29 BFP640ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 13 18 21 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 4 Revision 1.0, 2010-06-29 BFP640ESD List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 18 18 19 19 20 21 21 22 22 23 23 24 24 25 25 26 26 28 28 28 28 Data Sheet 5 Revision 1.0, 2010-06-29 BFP640ESD List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Sheet 6 Revision 1.0, 2010-06-29 Robust High Performance Low Noise Bipolar RF Transistor BFP640ESD 1 • • • • • • • • Features Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology 3 2 kV ESD robustness (HBM) due to integrated protection circuits 4 High maximum RF input power of 21 dBm 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA 27 dBm OIP3 typical at 2.4 GHz, 30 mA Accurate SPICE GP model available to enable effective design in process (see chapter 6) Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads 2 1 Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP640ESD Data Sheet SOT343 1=B 2=E Pin Configuration 3=C 7 4=E Marking T4s Revision 1.0, 2010-06-29 BFP640ESD Product Brief 2 Product Brief The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V. Table 1 Parameter Collector emitter breakdown voltage Collector base leakage current DC current gain Collector current Total power dissipation Quick Reference DC Characteristics at TA = 25°C Symbol Min. Values Typ. 4.7 – 180 – – Max. – 500 270 50 200 mA mW V nA 4.1 – 110 – – Unit Note / Test Condition V(BR)CEO ICBO hFE IC Ptot IC = 1 mA, IB = 0 VCB = 2 V, IE = 0 Open emitter VCE = 3 V, IC = 30 mA TS ≤ 88 °C Data Sheet 8 Revision 1.0, 2010-06-29 BFP640ESD Product Brief Table 2 Parameter Quick Reference AC Characteristics at TA = 25°C Symbol Min. Values Typ. 46 Max. – GHz – Unit Note / Test Condition Transition frequency fT VCE = 3 V, IC = 30 mA f = 1 GHz VCE = 3 V, f = 1.5 GHz Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point dB Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – 23.5 26.5 21 24 0.65 23.5 12 26.5 – – dB – – dB – – dBm – – dB IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA VCE = 3 V, f = 2.4 GHz Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – 21 23 18 20 0.7 20 12.5 27 – – dB – – dB – – dBm – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA Data Sheet 9 Revision 1.0, 2010-06-29 BFP640ESD Maximum Ratings 3 Maximum Ratings Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Min. Values Max. Open base – – 4.1 3.6 4.8 4.3 4.1 3.6 6 50 21 2 200 150 150 V V V V V V mA mA dBm kV mW °C °C Unit Note / Test Condition Table 3 Parameter Collector emitter voltage VCEO TA = 25 °C TA = -55 °C Open emitter Collector base voltage1) VCBO – – TA = 25°C TA = -55 °C Emitter / base shortened Collector emitter voltage 2) VCES – – TA = 25°C TA = -55 °C – – – HBM, all pins, acc. to JESD22-A114 Base current 3) IB IC PRFin 4) -10 – – -2 – – -55 Collector current RF input power ESD stress pulse VESD 5) Total power dissipation Junction temperature Storage temperature Ptot TJ TStg TS ≤ 88 °C – – 1) Low VCBO due to integrated protection circuits. 2) VCES is identical to VCEO due to integrated protection circuits. 3) Sustainable reverse bias current is high due to integrated protection circuits. 4) ESD robustness is high due to integrated protection circuits. 5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 10 Revision 1.0, 2010-06-29 BFP640ESD Thermal Characteristics 4 Thermal Characteristics Table 4 Parameter Thermal Resistance Symbol Min. 1) Values Typ. Max. Unit Note / Test Condition – Junction - soldering point RthJS – 310 – K/W 1)For calculation of RthJA please refer to Application Note Thermal Resistance AN 077 250 200 Ptot [mW] 150 100 50 0 0 25 50 75 TS [°C] 100 125 150 Figure 1 Total Power Dissipation Ptot = f (Ts) Data Sheet 11 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 5 5.1 Electrical Characteristics DC Characteristics Table 5 Parameter DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 4.7 – – – 180 Max. – 500 500 10 270 V nA nA μA 4.1 – – – 110 Unit Note / Test Condition Collector emitter breakdown voltage Collector emitter leakage current Collector base leakage current Emitter base leakage current DC current gain V(BR)CEO ICES ICBO IEBO hFE IC = 1 mA, IB = 0 Open base VCE = 2 V, VBE = 0 Emitter/base shortened VCB = 2 V, IE = 0 Open emitter VEB = 0.5 V, IC = 0 Open collector VCE = 3 V, IC = 30 mA Pulse measured 5.2 General AC Characteristics Table 6 Parameter General AC Characteristics at TA = 25 °C Symbol Min. Values Typ. 46 0.08 Max. – – GHz pF – – Unit Note / Test Condition Transition frequency Collector base capacitance fT CCB VCE = 3 V, IC = 30 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.4 – pF VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded Emitter base capacitance CEB – 0.7 – pF VEB = 0.4 V, VCB = 0 V f = 1 MHz Collector grounded Data Sheet 12 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C VB B (Pin 1) E Bias-T IN Figure 2 Table 7 Parameter BFP640ESD Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 34 39.5 25 35 0.6 30 11 25 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA Data Sheet 13 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics Table 8 Parameter AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 29 34.5 24.5 32 0.6 28.5 11 25 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 9 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. Values Typ. 26 30.5 23.5 28 0.6 26 11.5 26 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA Data Sheet 14 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics Table 10 Parameter AC Characteristics, VCE = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 23.5 26.5 21 24 0.65 23.5 12 26.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 11 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 22.5 25 19.5 22 0.65 22 12 27 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA Data Sheet 15 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics Table 12 Parameter AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 21 23 18 20 0.7 20 12.5 27 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 13 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 19 19 15 17 0.8 16 12.5 26.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gma Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA Data Sheet 16 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics Table 14 Parameter AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 14 14.5 11 12.5 1.05 11.5 12.5 26 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 15 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Note: Gma Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA AC Characteristics, VCE = 3 V, f = 10 GHz Symbol Min. Values Typ. 10 10.5 4.5 6 2 7 11 25.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 30 mA ZS = ZL = 50 Ω IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 30 mA IC = 30 mA 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 17 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 5.4 Characteristic DC Diagrams 60 50 40 IC [mA] 30 20 10 IB=25µA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE[V] Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter IB=325µA IB=275µA IB=225µA IB=175µA IB=125µA IB=75µA 1000 hFE 100 0.1 1 IC [ mA] 10 100 Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 18 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 100 10 1 IC [ mA] 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 VBE [ V] 0.7 0.8 0.9 Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 1 0.1 0.01 IB [ mA] 0.001 0.0001 0.00001 0.000001 0.4 0.5 0.6 VBE [ V] 0.7 0.8 0.9 Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 19 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 1.E-04 1.E-05 1.E-06 IB [ A] 1.E-07 1.E-08 1.E-09 1.E-10 0.2 0.3 0.4 VEB [ V] 0.5 0.6 Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 20 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 5.5 Characteristic AC Diagrams 50 45 40 35 fT [GHz] 30 25 20 15 10 5 0 0 10 20 30 IC [mA] 40 1.00V 50 60 2.00V 4.00V 3.00V 2.50V Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter 30 25 20 OIP3 [dBm] 15 10 5 0 −5 2V, 1.5GHz 3V, 1.5GHz 2V, 2.4GHz 3V, 2.4GHz 0 10 20 IC [mA] 30 40 50 Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters Data Sheet 21 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 0.2 0.18 0.16 0.14 [pF] C 0.12 0.1 cb 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 VCB [V] 2.5 3 3.5 4 Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 50 45 40 35 30 G [dB] 25 20 15 10 5 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 |S21| 2 Gms Gma G ms Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA Data Sheet 22 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 10 20 30 IC [mA] 40 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 50 60 Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 1 2 VCE [V] Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 3 4 5 Data Sheet 23 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 1 1.5 0.5 0.4 8 9 9 8 7 7 6 5 5 4 0.1 4 0.2 0.3 0.4 0.5 3 2 1 1.5 6 10 10 2 3 4 5 0.3 0.2 0.1 0 −0.1 −0.2 0.03 to 10 GHz 2 3 45 10 3 1 −10 −5 −4 1 2 −0.3 −0.4 −0.5 −1.5 −1 −3 −2 30 mA 6 mA Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 30 mA 1 1.5 0.5 0.4 0.3 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −1.5 −1 2 3 1.9GHz 0.9GHz 4 5 2.4GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 0.45GHz 45 10 I = 30mA c 5.5GHz Ic = 6.0mA −10 −5 −4 −3 10GHz −2 Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 6 / 30 mA Data Sheet 24 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 1 1.5 0.5 0.4 0.3 0.2 0.1 8 10 9 8 0.1 0.2 0.3 0.4 0.5 7 6 7 1 6 5 4 5 4 3 2 1 3 2 1 1.5 10 2 3 4 5 9 0.03 to 10 GHz 2 3 45 10 0 −0.1 −0.2 −10 −5 −4 −3 −0.3 −0.4 −0.5 −1.5 −1 −2 30 mA 6 mA Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 30 mA 2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 f [GHz] Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt I = 30mA C IC = 6.0mA 6 8 10 Data Sheet 25 Revision 1.0, 2010-06-29 BFP640ESD Electrical Characteristics 4 3.5 3 2.5 2 1.5 1 0.5 0 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 0 10 20 Ic [mA] Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz NFmin [dB] 30 40 50 5 4.5 4 3.5 NF50 [dB] 3 2.5 2 1.5 1 0.5 0 0 10 20 Ic [mA] Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 30 40 50 Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C. Data Sheet 26 Revision 1.0, 2010-06-29 BFP640ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 27 Revision 1.0, 2010-06-29 BFP640ESD Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.6 +0.1 -0.05 0.2 M A SOT343-PO V08 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 +0.1 Figure 20 Package Outline 0.6 0.8 1.15 0.9 SOT343-FP V08 Figure 21 Package Foot Print XY s Pin 1 96 Figure 22 Marking Description (Marking BFP640ESD: T4s) 1.6 Manufacturer 2009 June , Date Code(YM) Marking 4 0.2 Pin 1 2.15 2.3 8 1.1 SOT323-TP V02 Figure 23 Tape Dimensions Data Sheet 28 Revision 1.0, 2010-06-29 www.infineon.com Published by Infineon Technologies AG