BFP640_07

BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz • High maximum stable gain Gms = 24 dB at 1.8 GHz • Gold metallization for extra high reliability • 70 GHz fT -Silicon Germanium technology • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP640 1Pb-containing Marking R4s 1=B Pin Configuration 2=E 3=C 4=E - Package SOT343 package may be available upon special request 2007-05-29 1 BFP640 Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 90°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 300 Unit K/W Tj TA T stg 150 -65 ... 150 -65 ... 150 °C VCES VCBO VEBO IC IB Ptot Symbol VCEO 4 3.7 13 13 1.2 50 3 200 mW mA Value Unit V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, pulse measured 1T Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4 110 Values typ. 4.5 180 max. 30 100 3 270 Unit V µA nA µA - S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 2007-05-29 2 BFP640 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 30 mA, ZS =ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS =ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 30 - 40 0.09 0.2 GHz pF Ccb Cce - 0.23 - Ceb - 0.5 - F G ms 0.65 1.2 24 - dB dB G ma - 12.5 - dB |S21e|2 IP 3 P-1dB 21 10.5 26.5 13 - dB dBm 2007-05-29 3 BFP640 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 2 -0.0065 fA V V Ω fF ps A V ns - - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2 450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5 A mA Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: CBS RBS CBCC LCC C BFP640_Chip B S RCS E RES CES CCS LCB B LBB LBC CBEC C LEC CBE I LEB CBEO CCEO CCEI T = 25°C Itf = 400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 ) E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 120 120 20 696.2 682.4 230.6 98.4 55.9 180 79 75 131.2 102.5 112.6 180.4 1200 1200 300 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF Ω Ω Ω Valid up to 6GHz 2007-05-29 4 BFP640 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 220 mW 10 3 180 160 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 K/W RthJS 10 2 Ptot 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 1 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.25 Ptotmax /PtotDC pF - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CCB -3 -2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 10 s 10 0 0 0 2 4 6 8 10 V 14 tp VCB 2007-05-29 5 BFP640 Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) Transition frequency fT= ƒ(IC) f = 1GHz VCE = parameter 45 GHz VCE = parameter, f = 1.8 GHz 30 dBm 24 21 4V 35 30 3V IP3 18 3V fT 25 20 15 2V 2V 15 12 9 6 3 0 0 10 1V 5 0.5V 10 20 30 40 mA 60 0 0 10 20 30 40 mA 60 IC IC Power gain Gma, Gms = ƒ(IC) VCE = 3V f = parameter 30 dB 0.9GHz Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 3V, IC = 30mA 55 dB 26 24 45 40 G 22 20 18 16 4GHz G 35 1.8GHz 2.4GHz 30 3GHz Gms 25 20 15 10 0 |S21|² Gma 14 5GHz 12 10 0 6GHz 10 20 30 40 mA 60 1 2 3 4 GHz 6 IC f 2007-05-29 6 BFP640 Power gain Gma, Gms = ƒ (VCE) IC = 30mA f = parameter 30 0.9GHz dB 1.8GHz 2.4 2.2 2 1.8 Noise figure F = ƒ(I C) VCE = 3V, ZS = ZSopt 20 2.4GHz 3GHz 1.6 1.4 F [dB] G 15 4GHz 5GHz 6GHz 1.2 1 0.8 0.6 f = 6GHz f = 5GHz f = 4GHz f = 3GHz 10 5 0.4 0.2 f = 2.4GHz f = 1.8GHz f = 0.9GHz 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 10 20 I [mA] c VCE 30 40 50 Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Noise figure F = ƒ(f) VCE = 3V, ZS = Z Sopt 2 2 1.8 1.8 1.6 1.6 1.4 1.4 1.2 F [dB] F [dB] Z = 50Ω S 1.2 1 1 0.8 Z =Z S Sopt 0.8 IC = 30mA 0.6 0.6 IC = 5.0mA 0.4 0.4 0.2 0.2 0 0 10 20 I [mA] c 0 30 40 50 0 1 2 3 f [GHz] 4 5 6 7 2007-05-29 7 BFP640 Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 5 mA/ 30 mA 1 1.5 0.5 0.4 0.3 0.2 2.4GHz I = 5.0mA c 2 3 4 5 10 0.9GHz 1 1.5 5GHz 6GHz 2 3 45 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 0.1 1.8GHz 3GHz 0.2 0.3 0.4 0.5 4GHz −10 −5 −4 I = 30mA c −3 −2 −1.5 −1 2007-05-29 8 Package SOT343 BFP640 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2007-05-29 9 BFP640 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-05-29 10