BFP650

BFP650 NPN Silicon Germanium RF Transistor Preliminary data • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology ESD: Electrostatic discharge sensitive device, observe handling precaution! 3 4 2 1 VPS05605 Type BFP650 Maximum Ratings Parameter Marking R5s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS Package SOT343 Value Unit - Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 75°C 4 13 13 1.2 150 10 500 150 -65 ... 150 -65 ... 150 Value ≤ 140 V mA mW °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-08-2004 BFP650 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V hFE 100 180 320 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 4 4.5 V Symbol min. Values typ. max. Unit 2 Jan-08-2004 BFP650 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 80 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum available1) IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 80 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz Unit - 37 0.26 0.45 1.1 - GHz pF Ccb Cce Ceb F dB 0.8 1.9 - G ma |S21e|2 IP 3 17 6 29.5 dBm 21 10.5 dB P-1dB - 18 - 3 Jan-08-2004 BFP650 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.61 1000 2 2 1.8 0.895 682.5 1.9 1.25 0.6 0.2 0.27 3 2 -0.0065 fA V V Ω fF ps A V ns - - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2 450 0.47 42 18 1.036 0.2 0.8 10 0 0.5 294.9 -1.42 0.8 2.441E-11 1.0E-5 A mA Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 62 1 700 4.548 1.006 0.3 1.5 204.6 1 0.6 1.078 298 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: CBCO RCBS CBCC C B F P 6 5 0 _ C h ip LCC B LBB LBC CBEC B E S RCCS RCES LCB C LEC CBEI LEB CBEO T= 2 5 °C CCEO CCEI Itf = 1 2 5 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 ) E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CBCO = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 50 50 4 554.6 606.9 138.7 327.6 171.4 490 120 135 7.5 112.6 121.5 5.7 6.9 710 710 140 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF Ω Ω Ω Ω Valid up to 6GHz 4 Jan-08-2004 BFP650 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 550 mW 10 3 K/W 450 400 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 10 0 -7 10 10 -6 RthJS Ptot 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -5 10 -4 10 -3 10 -2 °C 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.8 pF Ptotmax/ PtotDC - 0.6 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CCB -3 -2 0.5 0.4 0.3 0.2 0.1 10 0 -7 10 10 -6 10 -5 10 -4 10 10 s 10 0 0 0 2 4 6 8 10 V 14 tp VCB 5 Jan-08-2004 BFP650 Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) Transition frequency fT= ƒ(IC) f = 1GHz VCE = parameter 40 VCE = parameter, f = 1.8 GHz 33 dBm 4V 3V GHz 27 24 30 3V IP3 18 15 12 9 6 3 0 0 15 30 45 60 1V 2V fT 21 25 20 2V 15 10 1V 0.5V 5 75 90 105 120 mA 150 0 0 20 40 60 80 100 120 140 mA 180 IC IC Power gain Gma, Gms = ƒ(IC) VCE = 3V f = parameter 30 dB 0.9GHz Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 3V, IC = 80mA 55 dB 26 24 22 45 40 35 1.8GHz 2.4GHz 3GHz G 20 18 16 14 12 G 30 25 20 4GHz 5GHz Gms S21² Gma 15 10 5 200 0 0 1 2 3 4 GHz 10 8 6 0 20 40 60 6GHz 80 100 120 140 160 mA 6 IC f 6 Jan-08-2004 BFP650 Power gain Gma, Gms = ƒ (VCE) IC = 80mA f = parameter 30 0.9GHz dB 1.8GHz 20 G 2.4GHz 3GHz 15 4GHz 5GHz 10 6GHz 5 0 0 1 2 3 4 V 5.5 VCE 7 Jan-08-2004