BFP650F

BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages • High OIP 3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 4 3 1 2 Top View 4 3 XYs 1 2 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP650F 1Pb-containing Marking R5s 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 package may be available upon special request 2007-08-09 1 BFP650F Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 85°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 130 Unit K/W Tj TA T stg 150 -65 ... 150 -65 ... 150 °C VCES VCBO VEBO IC IB Ptot Symbol VCEO 4 3.7 13 13 1.2 150 10 500 mW mA Value Unit V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 80 mA, VCE = 3 V, pulse measured 1T Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4 110 Values typ. 4.5 180 max. 100 100 10 270 Unit V µA nA µA - S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 2007-08-09 2 BFP650F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 80 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum available1) IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 6 GHz Transducer gain IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 80 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G - 42 0.26 - GHz pF Ccb Cce - 0.45 - Ceb - 1.3 - F G ma |S21e|2 15 IP 3 17.5 7.5 31 21.5 11 0.8 1.9 - dB dB dBm P-1dB - 17.5 - 2007-08-09 3 BFP650F Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb = ƒ (V CB) f = 1 MHz 550 0.8 500 0.7 450 0.6 400 350 0.5 Ptot [mW] Ccb [pF] 0 15 30 45 60 75 90 105 120 135 150 300 0.4 250 200 0.3 150 0.2 100 0.1 50 0 0 0 1 2 3 4 5 6 7 8 9 10 T [°C] S V CB [V] Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 1 GHz Power gain Gma, Gms = ƒ (f) VCE = 3 V, I C = 80 mA 45 50 40 45 40 35 3.00V 35 30 30 G ms fT [GHz] 25 G [dB] 20 25 2.00V 15 20 |S21| 15 2 Gma 10 10 5 1.00V 0.50V 0 20 40 60 80 100 120 140 160 180 5 0 0 0 1 2 3 4 5 6 IC [mA] f [GHz] 2007-08-09 4 BFP650F Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter in GHz 30 Power gain Gma, Gms = ƒ (VCE) IC = 80 mA f = parameter in GHz 30 28 0.90GHz 0.90GHz 26 25 24 1.80GHz 22 20 2.40GHz 20 1.80GHz 3.00GHz G [dB] 18 G [dB] 2.40GHz 3.00GHz 15 4.00GHz 5.00GHz 6.00GHz 16 14 4.00GHz 5.00GHz 6.00GHz 10 12 10 5 8 6 0 20 40 60 80 C 0 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 I [mA] V CE [V] 2007-08-09 5 Package TSFP-4 BFP650F Package Outline 1.4 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 4 3 1 2 0.2 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 ±0.05 Foot Print 0.35 0.45 0.5 0.5 Marking Layout (Example) Manufacturer 0.9 Pin 1 BFP420F Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.4 8 Pin 1 1.55 0.7 10˚ MAX. 0.8 ±0.05 0.55 ±0.04 2007-08-09 6 BFP650F Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-08-09 7