BFP650_10

BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP650 BFP650, High Linearity Low Noise SiGe:C NPN RF Transistor Revision History: 2010-10-22, Revision 1.0 Previous Revision: Page Subjects (changes since last revision) This datasheet replaces the revision from 16 Feb 2009. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet have been expanded and updated. The old datasheet revision remains fully valid for those customers who have got the revision from 16 Feb 2009. 2 3 4, 5 6 7, 8 Typical values for leakage currents included, description of hFE updated. Description of electrical parameters updated. Spice GP model parameters removed from datasheet, updated model parameters shifted to the internet simulation data section. Pulse load curves removed. AC characteristic curves updated. 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VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 1.0, 2010-10-22 BFP650 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 4.1 4.2 4.3 4.4 4.5 5 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 11 15 18 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 4 Revision 1.0, 2010-10-22 BFP650 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 BFP650 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 18 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20 Maximum Power Gain Gmax = f (VCE), IC = 70mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20 Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . 21 Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . 24 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Marking Description (Marking BFP650: R5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 5 Revision 1.0, 2010-10-22 BFP650 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f =900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f =1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f =1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f =2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f =3.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f =5.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Data Sheet 6 Revision 1.0, 2010-10-22 High Linearity Low Noise SiGe:C NPN RF Transistor BFP650 1 • • • • • • • • Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz Based on Infineon´s reliable, high volume SiGe:C wafer technology Easy to use Pb-free (RoHS compliant) standard package with visible leads Qualified according AEC Q101 3 4 1 2 Application Examples Driver amplifier • • • • • • • ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc Transmitter driver amplifier Output stage LNA for active antennas Suitable for 5 - 10.5 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP650 Data Sheet SOT343 1=B 2=E Pin Configuration 3=C 7 4=E Marking R5s Revision 1.0, 2010-10-22 BFP650 Maximum Ratings 2 Maximum Ratings Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Min. Values Max. Open base – – 4.0 3.7 13 13 1.2 150 10 500 150 V V V V V mA mA mW °C Unit Note / Test Condition Table 1 Parameter Collector emitter voltage VCEO TA = 25 °C TA = -55 °C Emitter / base shortened Open emitter Open collector – – Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total power dissipation Junction temperature 1) VCES VCBO VEBO IC IB Ptot TJ – – – – – – – TS ≤ 80 °C – Storage temperature TStg -65 150 °C – 1) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 8 Revision 1.0, 2010-10-22 BFP650 Thermal Characteristics 3 Thermal Characteristics Table 2 Parameter Thermal Resistance Symbol Min. 1) Values Typ. Max. Unit Note / Test Condition – Junction - soldering point RthJS – – 140 K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance AN077 600 500 400 Ptot [mW] 300 200 100 0 0 50 Ts [°C] 100 150 Figure 1 Total Power Dissipation Ptot = f (Ts) Data Sheet 9 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 4 4.1 Electrical Characteristics DC Characteristics Table 3 Parameter DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 4.5 – 1 1 0.01 170 Max. – 100 40 40 3 250 V µA nA nA µA 4 – – Unit Note / Test Condition Collector emitter breakdown voltage Collector emitter leakage current V(BR)CEO ICES IC = 3 mA, IB = 0 Open base VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 Emitter/base shortened Collector base leakage current Emitter base leakage current DC current gain ICBO IEBO hFE – – 100 VCB = 5 V, IE = 0 Open emitter VEB = 0.5 V, IC = 0 Open collector VCE = 3 V, IC = 70 mA Pulse measured 4.2 General AC Characteristics Table 4 Parameter General AC Characteristics at TA = 25 °C Symbol Min. Values Typ. 41 0.26 Max. – 0.4 GHz pF 31 – Unit Note / Test Condition Transition frequency Collector base capacitance fT CCB VCE = 3 V, IC = 70 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.45 – pF VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded Emitter base capacitance CEB – 1.3 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz Collector grounded Data Sheet 10 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 4.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C VB B (Pin 1) E Bias-T IN Figure 2 Table 5 Parameter BFP650 Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 35.5 38 35 37.5 0.75 32 16.5 29.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 6 Parameter Maximum power gain High linearity operation point Class A operation point Data Sheet Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 30 31.5 11 Max. dB – – Unit Note / Test Condition Gms Gms – – IC = 30 mA IC = 70 mA Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics Table 6 Parameter AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d) Symbol Min. Values Typ. 29 29.5 0.75 29.5 16.5 30 Max. dB Unit Note / Test Condition Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 7 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 8 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – dB – – dBm – – ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f =900 MHz Symbol Min. Values Typ. 25.5 26.5 23.5 24 0.8 24.5 17 31 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f =1.5 GHz Symbol Min. Values Typ. 22 22.5 19 19.5 0.85 Max. dB – – dB – – dB – Unit Note / Test Condition Gms Gms S21 S21 NFmin – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA Revision 1.0, 2010-10-22 Data Sheet 12 BFP650 Electrical Characteristics Table 8 Parameter Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 9 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 10 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point AC Characteristics, VCE = 3 V, f =1.5 GHz (cont’d) Symbol Min. Values Typ. 20.5 17 31 Max. – dBm – – – – – Unit Note / Test Condition Gass OP1dB OIP3 IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f =1.9 GHz Symbol Min. Values Typ. 20.5 20 17 17.5 0.95 17.5 17 30.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gma Gms S21 S21 NFmin Gass OP1dB OIP3 – – – 15 – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f =2.4 GHz Symbol Min. Values Typ. 18 17.5 14.5 15 1 15 17 30 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gma Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA Data Sheet 13 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics Table 11 Parameter AC Characteristics, VCE = 3 V, f =3.5GHz Symbol Min. Values Typ. 14 14.5 11 11.5 1.2 11.5 17 30 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 12 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Note: Gma Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA AC Characteristics, VCE = 3 V, f =5.5GHz Symbol Min. Values Typ. 10.5 10.5 6.5 7 1.6 8.5 16.5 29.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gma Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 30 mA IC = 70 mA ZS = ZL = 50 Ω IC = 30 mA IC = 70 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 70 mA IC = 70 mA 1. AC paramter limits verified by random sampling. 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result. 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 14 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 4.4 Characteristic DC Diagrams 160 140 120 100 IC [mA] 575µA 80 60 40 20 0 460µA 350µA 260µA 160µA 80µA 18µA 0 1 2 VCE [V] Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 940µA 810µA 690µA 3 4 5 120 110 100 90 hFE 80 70 60 50 0.1 1 10 IC [mA] 100 1000 Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 15 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 1000 100 IC [mA] 10 1 0.1 0.01 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 10 1 IB [mA] 0.1 0.01 0.001 0.0001 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0. 9 Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 16 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 1.E-05 1.E-06 IB [A] 1.E-07 1.E-08 1.E-09 0.8 1 1.2 1.4 VEB [V] 1.6 1.8 2 Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 17 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 4.5 Characteristic AC Diagrams 45 40 35 30 fT [GHz] 25 20 15 2.00V 10 5 0 1.00V 0 20 40 60 80 100 IC [mA] 120 140 160 180 2.50V 3.00V 4.00V Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter 32 30 28 OIP3 [dBm] 26 24 22 20 18 3V, 2.4GHz 4V, 2.4GHz 3V, 3.5GHz 4V, 3.5GHz 0 20 40 60 80 100 IC [mA] 120 140 160 180 Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters Data Sheet 18 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 0.6 0.5 0.4 CCB [pF] 0.3 0.2 0.1 0 0 0.5 1 1.5 2 VCB [V] 2.5 3 3.5 4 Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 |S |2 21 Gms Gma Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA Data Sheet 19 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 20 40 60 80 100 IC [mA] 120 140 160 180 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 0.45GHz 0.15GHz Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0.5 Figure 13 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum Power Gain Gmax = f (VCE), IC = 70 mA, f = Parameter in GHz Data Sheet 20 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 1 1.5 0.5 0.4 0.3 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −1.5 −1 −2 70 mA 30 mA 0.1 2 3 4 6 5 7 8 9 10 2 3 4 5 0.03 to 10 GHz 10 1 1.5 2 3 45 0.2 0.3 0.4 0.5 1 −10 −5 −4 −3 Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 70 mA 1 1.5 0.5 0.4 0.3 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −1.5 −1 −2 3.5GHz 0.1 2 3 4 5 0.45GHz 0.2 0.3 0.4 0.5 1 1.5 2 3 45 10 0.9GHz 1.9GHz 2.4GHz I = 30mA c I = 70mA c −10 −5 −4 −3 Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 70 mA Data Sheet 21 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 1 1.5 0.5 0.4 0.3 6 8 7 9 10 2 3 4 5 0.03 to 10 GHz 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 0.1 2 3 5 4 10 1 1.5 2 3 45 0.2 0.3 0.4 0.5 1 −10 −5 −4 −3 −2 −1.5 −1 70 mA 30 mA Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 70 mA 2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 f [GHz] 2.5 3 3.5 4 IC = 70mA IC = 30mA Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt Data Sheet 22 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 Ic [mA] Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 60 80 100 3 2.8 2.6 2.4 2.2 NF50 [dB] 2 1.8 1.6 1.4 f = 2.4GHz f = 3.5GHz 1.2 1 0.8 0.6 0.4 0 20 40 Ic [mA] Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 60 80 100 Data Sheet 23 Revision 1.0, 2010-10-22 BFP650 Electrical Characteristics 3 2.8 2.6 2.4 2.2 2 NF [dB] 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 20 40 Ic [mA] Figure 20 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz ZS = 50Ω Z =Z S Sopt 60 80 100 Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C. Data Sheet 24 Revision 1.0, 2010-10-22 BFP650 Simulation Data 5 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP650 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP650 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Data Sheet 25 Revision 1.0, 2010-10-22 BFP650 Package Information SOT343 6 Package Information SOT343 0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M A SOT343-PO V08 +0.1 Figure 21 Package Outline 0.6 0.8 1.15 0.9 SOT343-FP V08 Figure 22 Package Foot Print Manufacturer XY s Pin 1 96 2009 June , Date Code(YM) Marking Figure 23 Marking Description (Marking BFP650: R5s) 1.6 4 0.2 Pin 1 2.15 2.3 8 1.1 SOT323-TP V02 Figure 24 Tape Dimensions Data Sheet 26 Revision 1.0, 2010-10-22 www.infineon.com Published by Infineon Technologies AG