BFP740FESD

BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP740FESD BFP740FESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.1 Previous Revision: Rev. 1.0 Page 8, 10 18 - 21 Subjects (major changes since last revision) Icmax changed from 35mA to 45mA, PRFin value added Characteristic DC diagrams and OIP3 diagra added Trademarks of Infineon Technologies AG BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. 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Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 1.1, 2010-06-29 BFP740FESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 13 18 21 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 4 Revision 1.1, 2010-06-29 BFP740FESD List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP740FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP740FESD: T7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 18 18 19 19 20 21 21 22 22 23 23 24 24 25 25 26 26 28 28 28 28 Data Sheet 5 Revision 1.1, 2010-06-29 BFP740FESD List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Sheet 6 Revision 1.1, 2010-06-29 Robust High Performance Low Noise Bipolar RF Transistor BFP740FESD 1 • • • • • • • • Features Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology 3 2 kV ESD robustness (HBM) due to integrated protection circuits High maximum RF input power of 21 dBm 4 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA Accurate SPICE GP model available to enable effective design in process (see chapter 6) Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads 2 1 Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP740FESD Data Sheet TSFP-4-1 1=B 2=E Pin Configuration 3=C 7 4=E Marking T7s Revision 1.1, 2010-06-29 BFP740FESD Product Brief 2 Product Brief The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V. Table 1 Parameter Collector emitter breakdown voltage Collector base leakage current DC current gain Collector current Total power dissipation Quick Reference DC Characteristics at TA = 25°C Symbol Min. Values Typ. 4.7 – 250 – – Max. – 400 400 45 160 mA mW V nA 4.2 – 160 – – Unit Note / Test Condition V(BR)CEO ICBO hFE IC Ptot IC = 1 mA, IB = 0 Open base VCB = 2 V, IE = 0 Open emitter VCE = 3 V, IC = 25 mA TS ≤ 100 °C Data Sheet 8 Revision 1.1, 2010-06-29 BFP740FESD Product Brief Table 2 Parameter Quick Reference AC Characteristics at TA = 25°C Symbol Min. Values Typ. 47 Max. – GHz – Unit Note / Test Condition Transition frequency fT VCE = 3 V, IC = 25 mA f = 1 GHz VCE = 3 V, f = 2.4 GHz Maximum Power Gain Low noise operation point High linearity operation point Transducer Gain Low noise operation point High linearity operation point Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point dB Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – 22 26 20 22.5 0.6 20.5 10 24.5 – – dB – – dB – – dBm – – dB IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA VCE = 3 V, f = 5.5 GHz Maximum Power Gain Low noise operation point High linearity operation point Transducer Gain Low noise operation point High linearity operation point Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – 19 20.5 13.5 15.5 0.8 14.5 10 23.5 – – dB – – dB – – dBm – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Data Sheet 9 Revision 1.1, 2010-06-29 BFP740FESD Maximum Ratings 3 Maximum Ratings Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Min. Values Max. Open base – – 4.2 3.7 4.9 4.4 4.2 3.7 5 45 21 2 160 150 150 V V V V V V mA mA dBm kV mW °C °C Unit Note / Test Condition Table 3 Parameter Collector emitter voltage VCEO TA = 25°C TA = -55 °C Open emitter Collector emitter voltage1) VCBO – – TA = 25°C TA = -55 °C Emitter / base shortened Collector emitter voltage 2) VCES – – TA = 25°C TA = -55 °C – – – HBM, all pins, acc. to JESD22-A114 Base current 3) IB IC PRFin 4) -10 – – -2 – – -55 Collector current RF input power ESD stress pulse VESD 5) Total power dissipation Junction temperature Storage temperature Ptot TJ TStg TS ≤ 100 °C – – 1) Low VCBO due to integrated protection circuits 2) VCES is identical to VCEO due to integrated protection circuits. 3) Sustainable reverse bias current is high due to integrated protection circuits. 4) ESD robustness is high due to integrated protection circuits. 5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 10 Revision 1.1, 2010-06-29 BFP740FESD Thermal Characteristics 4 Thermal Characteristics Table 4 Parameter Thermal Resistance Symbol Min. 1) Values Typ. Max. Unit Note / Test Condition – Junction - soldering point RthJS – 315 – K/W 1)For calculation of RthJA please refer to Application Note Thermal Resistance AN 077 180 160 140 120 Ptot [mW] 100 80 60 40 20 0 0 25 50 75 TS [°C] 100 125 150 Figure 1 Total Power Dissipation Ptot = f (Ts) Data Sheet 11 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 5 5.1 Electrical Characteristics DC Characteristics Table 5 Parameter DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 4.7 – – – 250 Max. – 400 400 10 400 V nA nA μA 4.2 – – – 160 Unit Note / Test Condition Collector emitter breakdown voltage Collector emitter leakage current Collector base leakage current Emitter base leakage current DC current gain V(BR)CEO ICES ICBO IEBO hFE IC = 1 mA, IB = 0 Open base VCE = 2 V, VBE = 0 Emitter/base shortened VCB = 2 V, IE = 0 Open emitter VEB = 0.5 V, IC = 0 Open collector VCE = 3 V, IC = 25 mA Pulse measured 5.2 General AC Characteristics Table 6 Parameter General AC Characteristics at TA = 25 °C Symbol Min. Values Typ. 47 0.08 Max. – – GHz pF – – Unit Note / Test Condition Transition frequency Collector base capacitance fT CCB VCE = 3 V, IC = 25 mA f = 1 GHz VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.4 – pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.5 – pF VEB = 0.4 V, VCB = 0 f = 1 MHz Collector grounded Data Sheet 12 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C VB B Bias-T (Pin 1) E IN Figure 2 Table 7 Parameter BFP740FESD Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 33.5 39 25 34 0.5 31 10 23.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Data Sheet 13 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics Table 8 Parameter AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 29 34 24.5 32.5 0.5 29 10 23.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 9 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. Values Typ. 26 30.5 24 29.5 0.55 26.5 10 24 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Data Sheet 14 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics Table 10 Parameter AC Characteristics, VCE = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 23.5 28 22 26 0.55 24 10 24 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 11 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 22.5 27 21 24.5 0.55 22 10 24.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Data Sheet 15 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics Table 12 Parameter AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 22 26 20 22.5 0.6 20.5 10 24.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 13 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 20.5 24 17 19.5 0.65 17 10 24.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Data Sheet 16 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics Table 14 Parameter AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 19 20.5 13.5 15.5 0.8 14.5 10 23.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 15 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Note: Gms Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 10 GHz Symbol Min. Values Typ. 12.5 14 7 9 1.45 9 8 21 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gma Gma S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 6 mA IC = 25 mA ZS = ZL = 50 Ω IC = 6 mA IC = 25 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 17 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 5.4 Characteristic DC Diagrams 50 IB = 225µA IB = 205µA IB = 185µA IB = 165µA IB = 145µA IB = 125µA IB = 105µA IB = 85µA IB = 65µA 10 IB = 45µA IB = 25µA IB = 5µA 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 40 30 IC [mA] 20 0 VCE [ V] Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 1000 hFE 100 0.1 1 IC [mA] 10 100 Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 18 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 100 10 1 IC [ mA] 0.1 0.01 0.001 0.0001 0.5 0.6 0.7 VBE [ V] 0.8 0.9 Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 1 0.1 0.01 IB [ mA] 0.001 0.0001 0.00001 0.5 0.6 0.7 V BE [ V] 0.8 0.9 Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 19 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 0.3 0.4 0.5 VEB [ V] 0.6 0.7 0.8 Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet IB [ A] 20 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 5.5 Characteristic AC Diagrams 50 45 40 35 fT [GHz] 30 25 20 15 10 4.00V 3.00V 2.50V 2.00V 1.00V 5 0 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter 30 25 20 OIP3 [dBm] 15 10 5 0 −5 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz 0 5 10 15 20 IC [mA] 25 30 35 Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters Data Sheet 21 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 0.2 0.18 0.16 0.14 Ccb [pF] 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 V 2 [V] CB 2.5 3 3.5 4 Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 50 45 40 35 30 G [dB] 25 G 20 15 10 5 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 |S21| 2 ma Gms Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA Data Sheet 22 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 44 41 38 35 32 29 G [dB] 26 23 20 17 14 11 8 5 0 5 10 15 20 25 IC [mA] 30 35 40 45 10.00GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 0.15GHz Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 44 41 38 35 32 29 G [dB] 26 23 20 17 14 11 8 5 0 1 2 VCE [V] Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 3 4 5 Data Sheet 23 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 0.8 0 .6 1 10 GHz 2 0 0.. 4 0.2 0.4 0.6 0.8 1 0 10 Ic = 6 mA Ic = 25 mA 3 4 2 3 4 5 2 -0. -0. 6 -0.8 Step 1 GHz Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA 0.8 0 .6 1 -1 2 -2 . -0 2.4 GHz 5.5 GHz 0.2 0.4 0.6 0.8 1 5 10 0 0.45 GHz 10 GHz -10 0 10 Ic = 6 mA Ic = 25 mA -4 -5 -3 2 2 -0. 4 -0. 6 -0.8 Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA Data Sheet -1 24 -2 . -0 3 4 5 -1 -10 -4 -4 -5 5 -3 3 0. 4 4 4 3 4 0 .2 . 5 10 MHz 10 0 .2 2 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 0.8 0 .6 1 2 0 0.. 4 3 4 0.2 0.4 0.6 0.8 1 0 10 Ic = 6mA Ic = 25mA 2 3 4 5 -0.2 -3 3 -0. 6 Step 1 GHz -0.8 Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 f [GHz] Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt -1 6 -2 . -0 4 I = 25mA C IC = 6.0mA 8 Data Sheet 25 -1 -10 -4 -4 -5 5 0 .2 . 10 GHz 10 MHz 5 10 10 Revision 1.1, 2010-06-29 BFP740FESD Electrical Characteristics 3 2.8 2.6 2.4 2.2 2 NFmin [dB] 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 Ic [mA] 25 30 35 f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 6 5.6 5.2 4.8 4.4 4 NF50 [dB] 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 5 10 15 20 Ic [mA] 25 30 35 f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C Data Sheet 26 Revision 1.1, 2010-06-29 BFP740FESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP740FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740FESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 27 Revision 1.1, 2010-06-29 BFP740FESD Package Information TSFP-4-1 7 Package Information TSFP-4-1 1.4 ±0.05 1 2 0.2 ±0.05 0.5 ±0.05 0.5 ±0.05 1.2 ±0.05 0.2 ±0.05 4 3 0.15 ±0.05 TSFP-4-1, -2-PO V04 Figure 20 Package Outline 0.35 0.45 0.5 0.5 TSFP-4-1, -2-FP V04 Figure 21 Package Foot Print Manufacturer XYs Pin 1 Marking Figure 22 Marking Example (Marking BFP740FESD: T7s) 0.9 4 0.2 1.4 Pin 1 8 1.55 0.7 TSFP-4-1, -2-TP V05 Figure 23 Tape Dimensions Data Sheet 28 0.8 ±0.05 0.2 ±0.05 0.55 ±0.04 Revision 1.1, 2010-06-29 www.infineon.com Published by Infineon Technologies AG