BFP750
High Linearity Low Noise SiGe:C NPN RF Transistor
Data Sheet
Revision 1.0, 2010-10-22
RF & Protection Devices
Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP750
Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2010-10-22
Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.0, 2010-10-22
BFP750
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 4.1 4.2 4.3 4.4 4.5 5 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 11 15 18
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
4
Revision 1.0, 2010-10-22
BFP750
List of Figures
List of Figures
Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 BFP750 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 18 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC =60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20 Maximum Power Gain Gmax = f (VCE), IC = 60 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20 Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . 21 Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 60 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . 24 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Marking Description (Marking BFP750: R8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
List of Tables
List of Tables
Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data Sheet
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Revision 1.0, 2010-10-22
SiGe:C Heterojunction Wideband RF Bipolar Transistor
SOT343
1
• • • • • • • •
Features
Highly linear low noise driver amplifier for all RF frontends up to 5.5 GHz Output compression point OP1dB = 16 dBm at 60 mA, 3 V, 3.5 GHz, 50 Ω system Output 3rd order intermodulation point OIP3 = 28.5 dBm at 60 mA, 3 V, 3.5 GHz, 50 Ω system Maximum gain Gms = 19 dB at 60 mA, 3 V, 3.5 GHz Minimum noise figure NFmin = 1.15 dB at 30 mA, 3 V, 3.5 GHz Based on Infineon´s reliable, high volume SiGe:C wafer technology Easy to use Pb-free (RoHS compliant) standard package with visible leads Qualified according AEC Q101
3 4 1
2
Application Examples Driver amplifier • • • • • • • 1.9 GHz and 5.8 GHz cordless phones 2.4 GHz WLAN / Bluetooth / WiMAX 3.5 GHz WiMax 5.5 GHz WLAN / WiMAX GPS, SDARS 2.4 / 5.5 GHz WLAN 2.4 / 3.5 / 5.5 GHz WiMAX, etc Transmitter driver amplifier
Output stage LNA for active antennas
Suitable for 8 - 12 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name BFP750 Data Sheet
Package SOT343 1=B
Pin Configuration 2=E 7 3=C 4=E
Marking R8s
Revision 1.0, 2010-10-22
BFP750
Maximum Ratings
2
Maximum Ratings
Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Values Min. Max. Open base – – 4.0 3.5 13 13 1.2 120 12 360 150 V V V V V mA mA mW °C Unit Note / Test Condition
Table 1 Parameter
Collector emitter voltage
VCEO
TA = 25 °C TA = -55 °C
Emitter / base shortened Open emitter Open collector – –
Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total power dissipation Junction temperature
1)
VCES VCBO VEBO IC IB Ptot TJ
– – – – – – –
TS ≤ 85 °C
–
Storage temperature TStg -55 150 °C – 1)TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Data Sheet
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BFP750
Thermal Characteristics
3
Thermal Characteristics
Table 2 Parameter
Thermal Resistance Symbol Min.
1)
Values Typ. Max.
Unit
Note / Test Condition –
Junction - soldering point RthJS – – 180 K/W 1)For calculation of RthJA please refer to Application Note Thermal Resistance AN077
400 350 300 Ptot [mW] 250 200 150 100 50 0 0 50 Ts [°C]
Figure 1 Total Power Dissipation Ptot = f (Ts)
100
150
Data Sheet
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BFP750
Electrical Characteristics
4
4.1
Electrical Characteristics
DC Characteristics
Table 3 Parameter
DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 4.7 1 1 0.1 250 Max. – 40 40 3 400 V nA nA µA 4 – – – 160 Unit Note / Test Condition
Collector emitter breakdown voltage Collector emitter leakage current Collector base leakage current Emitter base leakage current DC current gain
V(BR)CEO ICES ICBO IEBO hFE
IC = 1 mA, IB = 0
Open base
VCE = 5 V, VBE = 0
Emitter/base shortened
VCB = 5 V, IE = 0
Open emitter
VEB = 0.5 V, IC = 0
Open collector
VCE = 3 V, IC = 60 mA
Pulse measured
4.2
General AC Characteristics
Table 4 Parameter
General AC Characteristics at TA = 25 °C Symbol Min. Values Typ. 41 0.24 Max. – – GHz pF – – Unit Note / Test Condition
Transition frequency Collector base capacitance
fT CCB
VCE = 3 V, IC = 60 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.55
–
pF
VCE = 3 V, VBE = 0 V f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
1
–
pF
VEB = 0.5 V, VCB = 0 V f = 1 MHz
Collector grounded
Data Sheet
10
Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
4.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC Top View
Bias -T
OUT E C
VB B
(Pin 1)
E
Bias-T
IN
Figure 2 Table 5 Parameter
BFP750 Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 34.5 35.5 33 33.5 0.85 32.5 15 27.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 6 Parameter Maximum power gain High linearity operation point Class A operation point Data Sheet
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 29.5 31.5 11 Max. dB – – Unit Note / Test Condition
Gms Gms
– –
IC = 30 mA IC = 60 mA
Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics Table 6 Parameter Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 7 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 8 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d) Symbol Min. Values Typ. 29.5 30.5 0.85 29.5 15.5 29 Max. dB Unit Note / Test Condition
ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA
S21 S21 NFmin Gass OP1dB OIP3
– – – – – –
– – dB – – dBm – –
ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. Values Typ. 26 27.5 25 25 0.85 24.5 16 30 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 23.5 24.5 20.5 21 0.85 Max. dB – – dB – – dB – Unit Note / Test Condition
Gms Gms S21 S21 NFmin
– – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA
Revision 1.0, 2010-10-22
Data Sheet
12
BFP750
Electrical Characteristics Table 8 Parameter Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 9 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 10 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point AC Characteristics, VCE = 3 V, f = 1.5 GHz (cont’d) Symbol Min. Values Typ. 20.5 16 30 Max. – dBm – – – – – Unit Note / Test Condition
Gass OP1dB OIP3
IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 22.5 23.5 18.5 19 0.9 18.5 16 30 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 21 22 16.5 16.5 0.9 16 16 29.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
Table 11 Parameter
AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 19 19 13 13 1.15 13.5 16 28.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 12 Parameter Maximum power gain High linearity operation point Class A operation point Transducer gain High linearity operation point Class A operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Note:
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 14 14 8 8 1.4 11 15 27 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition
Gma Gma S21 S21 NFmin Gass OP1dB OIP3
– – – – – – – –
IC = 30 mA IC = 60 mA ZS = ZL = 50 Ω IC = 30 mA IC = 60 mA ZS = Zopt IC = 30 mA IC = 30 mA ZS = ZL = 50 Ω IC = 60 mA IC = 60 mA
1. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result 2. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
14
Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
4.4
Characteristic DC Diagrams
120 110 100 90 80 IC [mA] 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 540 µA 475 µA 410 µA 350 µA 280 µA 230 µA 180 µA 130 µA 90 µA 50 µA
Figure 3
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
1000
hFE 100 0.1 1 10 IC [mA] 100 1000
Figure 4
DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
1000
100
10
1
0.1
0.01 0.6 0.65 0.7 0.75 0.8 0.85 0.9
Figure 5
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
1
0.1
IB [mA]
0.01
0.001
0.0001 0.6 0.65 0.7 0.75 VBE [ V] 0.8 0.85 0.9
Figure 6
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
1.E-05
1.E-06
1.E-07 IB [A] 1.E-08 1.E-09 1.E-10 1 1.2 1.4 1.6 1.8 2 VEB [V] 2.2 2.4 2.6 2.8 3
Figure 7
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
4.5
Characteristic AC Diagrams
45 40 35 30 fT [GHz] 3.00V 25 20 2.50V 15 10 5 0 2.00V 1.00V 0 20 40 60 80 IC [mA] 100 120 140 4.00V
Figure 8
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
32 30 28 26 OIP3 [dBm] 24 22 20 18 16 14 12 0 20 40 60 80 IC [mA] 100 120 140 3V, 3.5GHz 4V, 3.5GHz 3V, 5.5GHz 4V, 5.5GHz
Figure 9
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Data Sheet
18
Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
0.6
0.5
0.4 CCB [pF]
0.3
0.2
0.1
0
0
0.5
1
1.5
2 2.5 VCB [V]
3
3.5
4
Figure 10
Collector Base Capacitance CCB = f (VCB), f = 1 MHz
39 36 33 30 27 24 G [dB] 21 18 15 12 9 6 3 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 |S21|
2
G
ms
G
ma
Figure 11
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 60 mA
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
39 36 33 30 27 24 G [dB] 21 18 15 12 9 6 3 0 0 20 40 60 80 100 IC [mA] 120 140 160 5.50GHz 10.00GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 0.15GHz
Figure 12
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
39 36 33 30 27 24 G [dB] 21 18 15 12 9 6 3 0 0.5
Figure 13
0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz
1
1.5
2
2.5 3 VCE [V]
3.5
4
4.5
5
Maximum Power Gain Gmax = f (VCE), IC = 60 mA, f = Parameter in GHz
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
1 1.5 0.5 0.4
4 5 6 7 8 9 10
2 3 4 5
0.3
3
0.2
0.03 to 10 GHz
0.1 0 −0.1 −0.2 −0.3
0.1
2
10
0.2 0.3 0.4 0.5 1 1.5 2 3 45
1 1
−10 −5 −4 −3 −0.5 −1.5 −1 −2
60 mA 30 mA
−0.4
Figure 14
Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 60 mA
1 1.5 0.5 0.4 0.3 0.2 0.1 0 −0.1 −0.2
1.9GHz
0.1
2 3 4 5
0.45GHz
0.2 0.3 0.4 0.5 1 1.5 2 3 45
10
0.9GHz 1.5GHz I = 30mA c Ic = 60mA
−10 −5 −4 −3 −2 −1.5 −1
−0.3 −0.4
2.4GHz 3.5GHz
−0.5
Figure 15
Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 60 mA
Data Sheet
21
Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
1 1.5 0.5 0.4 0.3
5 7 6 9 8 10
2 3 4 5
4
0.2
0.03 to 10 GHz
0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5
0.1
3
10
1 1.5 2 3 45
0.2 0.3 0.4 0.5
2
1 1
−10 −5 −4 −3 −2 −1.5 −1
60 mA 30 mA
Figure 16
Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 60 mA
2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 f [GHz] 2.5
IC = 60mA I = 30mA
C
3
3.5
4
Figure 17
Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 60 mA, ZS = Zopt
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 Ic [mA] 50
f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz
60
70
80
Figure 18
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
2.4 2.2 2 1.8 1.6 NF50 [dB] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 Ic [mA] 50
f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz
60
70
80
Figure 19
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Electrical Characteristics
2.4 2.2 2 1.8 1.6 NF [dB] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 Ic [mA] 50 60 70 80
Z = 50Ω
S
ZS = ZSopt
Figure 20
Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 3.5 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C.
Data Sheet
24
Revision 1.0, 2010-10-22
BFP750
Simulation Data
5
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP750 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP750 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself.
Data Sheet
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Revision 1.0, 2010-10-22
BFP750
Package Information SOT343
6
Package Information SOT343
0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M
+0.1 0.6 -0.05
0.1 MAX. 0.1 A
2
0.1 MIN.
0.15 -0.05 0.2 M A
SOT343-PO V08
+0.1
Figure 21
Package Outline
0.6
0.8
1.15 0.9
SOT343-FP V08
Figure 22
Package Foot Print
Manufacturer
XY s
Pin 1
96
2009 June , Date Code(YM)
Marking
Figure 23
Marking Description (Marking BFP750: R8s)
1.6
4
0.2
Pin 1
2.15
2.3
8
1.1
SOT323-TP V02
Figure 24
Tape Dimensions
Data Sheet
26
1.25 ±0.1
2.1 ±0.1
Revision 1.0, 2010-10-22
www.infineon.com
Published by Infineon Technologies AG