BFQ19S

BFQ19S NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 1 2 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ19S Maximum Ratings Parameter Marking FG 1=B Pin Configuration 2=C 3=E Package SOT89 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 20 20 3 75 10 1 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 85 °C 1) mA W °C
65 K/W 1 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , IP3 9.5 4 35 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Third order intercept point IC = 70 mA, VCE = 8 V, ZS =ZSopt , ZL =ZLopt , f = 1.8 GHz Gma 11.5 7 F 2.5 4 Ceb 4.4 Cce 0.4 Ccb 1 1.5 fT 4 5.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2)
dBm 3 Jun-22-2001 BFQ19S Total power dissipation Ptot = f (TS ) 1200 mW 1000 900 P tot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-22-2001