BFQ19S_10

BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 2 3 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFQ19S Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS ≤ 85°C Junction temperature Marking FG Pin Configuration 1=B 2=C 3=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj T jo TA T stg Symbol RthJS Value 15 20 20 3 210 21 1 150 - ... -65 ... 150 -65 ... 150 Value ≤ 65 Package SOT89 Unit V mA W °C °C Operation junction temperature range Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3) 1Pb-containing 2T 3For Unit K/W package may be available upon special request is measured on the collector lead at the soldering point to the pcb S calculation of RthJA please refer to Application Note Thermal Resistance 1 2010-03-12 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured hFE 70 100 140 IEBO 100 µA ICBO 100 nA ICES 10 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 2010-03-12 BFQ19S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 20 mA, VCE = 6 V, Z S = ZSopt, f = 900 MHz f = 1.8 GHz Power gain, maximum available1) IC = 70 mA, VCE = 8 V, Z S = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, Z S = Z L = 50Ω, f = 900 MHz f = 1.8 GHz Third order intercept point at output VCE = 8 V, I C = 70 mA, Z S = ZSopt, Z L = ZLopt, f = 1.8 GHz 1G 4 - 5.5 1.05 1.35 GHz pF Ccb Cce - 0.4 - Ceb - 3.9 - F G ma |S 21e|2 IP 3 9.5 4 32 11.5 7 1.8 3 - dB dB dBm 2 1/2 ma = |S21/S 12| (k-(k -1) ) 3 2010-03-12 BFQ19S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 1200 mW 10 2 1000 900 K/W Ptot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 RthJS 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 Ptotmax /PtotDC - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2010-03-12 Package SOT89 BFQ19S Package Outline 4.5 ±0.1 45˚ 0.25 ±0.05 B 1.5 ±0.1 0.2 MAX. 10˚ MAX. 1) 1.6 ±0.2 2.5 ±0.1 1 ±0.1 4 ±0.25 0.15 1 2 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.2 B 0.15 M B x3 1) Ejector pin markings possible Foot Print 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 0.2 1.2 1.0 2.5 Pin 1 2005, June Date code (YM) Manufacturer Pin 1 4.6 12 1 ±0.2 4.3 1.6 5 2.75 +0.1 -0.15 1) 2010-03-12 BFQ19S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2010-03-12