BFR106

BFR106 NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR194 (PNP) 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA




2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR106 Maximum Ratings Parameter Marking R7s 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Package SOT23 Value 15 20 20 3 100 12 700 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 73 °C 1) Ptot Tj TA Tstg
110 K/W 1 Jun-27-2001 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 10.5 5 IC = 70 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 12.5 7.5 F 2.5 4 Ceb 4.4 Cce 0.25 Ccb 0.95 1.5 fT 3.5 5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )
3 Jun-27-2001 BFR106 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.8998 15 1.3235 4.1613 1.4602 1.0893 5.0933 35.78 62.059 0.81533 1.2466 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 132.75 0.44125 11.407 0.010016 1.2652 1.1351 0.85909 0.44444 0 0.46849 0 0 0.92887 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.89608 71.424 0.91008 2.0992 0.028135 0.27485 0.69062 0.10681 2327.8 0.14496 0.75 1.11 300 fA fA mA - V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.85 0.51 0.69 0.61 0 0.43 73 84 165 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-27-2001
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BFR106 Total power dissipation Ptot = f (TS ) 800 mW 600 TS P tot 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-27-2001 BFR106 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 3.2 pF 6.0 GHz 5.0 2.4 4.5 4.0 5V 3V 2V Ccb 2.0 fT 3.5 3.0 2.5 2.0 1.6 1.2 1V 0.7V 0.8 1.5 1.0 0.4 0.5 0.0 0 4 8 12 16 V 22 0.0 0 20 40 60 80 mA 120 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 14 10V dB 5V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 9.0 dB 7.0 6.0 5V 3V 10 2V G 8 G 5.0 4.0 3.0 4 1V 2V 6 2.0 2 0.7V 1.0 0.7V 1V 0 0 20 40 60 80 mA 120 0.0 0 20 40 60 80 mA 120 IC IC 6 Jun-27-2001 BFR106 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 14 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 36 IC=70mA dB 0.9GHz dBm 32 0.9GHz 10 30 IP 3 G 28 26 24 8 1.8GHz 6 1.8GHz 22 4 20 18 2 16 0 0 2 4 6 8 V 1V 12 14 0 10 20 30 40 50 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 40 IC=70mA dB IC =70mA 35 30 30 G 25 20 S21 25 20 15 15 10 10 5 0 -5 0.0 10V 1V 0.7V 5 0 -5 0.0 0.7V 1V 10V 0.5 1.0 1.5 2.0 2.5 3.0 GHz 4.0 0.5 1.0 1.5 2.0 f 7
8V 5V 3V 2V 60 70 80 mA 100 IC 2.5 GHz 3.5 f Jun-27-2001