BFR106
NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 @ 900MHz,8V,70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101
3 1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR106
Parameter
Marking R7s
Pin Configuration 1=B 2=E
Symbol VCEO
3=C
Value
Package SOT23
Unit
Maximum Ratings at TA = 25 °C, unless otherwise specified
Collector-emitter voltage,
TA = 25°C TA = -55°C
V 16 15
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS ≤ 73 °C
VCES VCBO VEBO IC IB Ptot TJ TStg Symbol RthJS
20 20 3 210 21 700 150 -55 ... 150
Value ≤ 110 Unit
mA mW °C
Junction temperature Storage temperature
Thermal Resistance Parameter
Junction - soldering point2)
1T 2For
K/W
S is measured on the collector lead at the soldering point to the pcb
calculation of RthJA please refer to Application Note AN077 Thermal Resistance
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BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO ICES
15
-
-
V µA
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 VCE = 10 V, VBE = 0
ICBO IEBO hFE
0.001 1 1 100
1 0.03 30 30 140 nA
Collector-base cutoff current
VCB = 10 V, IE = 0
70
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V, pulse measured
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz NFmin 1.8 3 dB Ceb 3.9 Cce 0.27 Ccb 0.85 1.2 pF 3.5 5 GHz
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Power gain, maximum available1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Transducer gain IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz Third order intercept point at output2) VCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL =50Ω 1dB Compression point IC = 70 mA, VCE = 8 V, ZS =ZL =50Ω, f = 0.9 GHz
1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP value depends on termination of all intermodulation frequency components. 3
1G
Unit max. dB
typ.
Gma |S21e|2 IP3 10.5 5 31 13 8.5 -
dB
dBm
P-1dB
-
22
-
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Total power dissipation P tot = ƒ(TS)
800
mW
600
Ptot
500
400
300
200
100
0 0
20
40
60
80
100
120 °C
150
TS
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SPICE Parameter (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design.
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Package SOT23
BFR106
Package Outline
0.15 MIN.
1 ±0.1 0.1 MAX.
1.3 ±0.1
2.9 ±0.1
3
B
2.4 ±0.15
10˚ MAX.
0.4 +0.1 -0.05
1)
1
2
10˚ MAX.
C 0.95 1.9
0.08...0.1
0...8˚
A
5
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
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BFR106
Datasheet Revision History: 3 Dezember 2010 This datasheet replaces the revisions from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 2 Typical values for leakage currents included, values for maximum leakage currents reduced 3 Spice Parameter removed from the datasheet, respective link to the internet site added
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Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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