BFR180W

BFR180W NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz
3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR180W Maximum Ratings Parameter Marking RDs 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Package SOT323 Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126 °C 1) Ptot Tj TA Tstg
790 K/W 1 Jun-13-2001 BFR180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-13-2001 BFR180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 1 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz |S21e|2 , 8.5 6 IC = 1 mA, VCE = 5 V, ZS = ZL = 50 13.5 10.5 Gms 2.1 2.25 F Ceb 0.1 Cce 0.22 Ccb 0.3 0.45 fT 5 7 typ. max. Unit GHz pF dB 1G ms = |S21 / S12 |
3 Jun-13-2001 BFR180W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.18519 26.867 1.9818 3.2134 1.6195 60 3.2473 14.866 1.0202 1.1812 2.2648 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.687 0.025252 20.325 0.012138 1.4255 3.7045 1.1812 0.3062 0 0.30423 0 0 0.87906 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0236 130.93 0.93013 6.1852 0.01 0.56 0.41827 0.22023 183.69 0.08334 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-13-2001
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BFR180W Total power dissipation Ptot = f (TS ) 35 mW 25 P tot 20 15 10 5 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 Ptotmax / PtotDC K/W - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-13-2001 BFR180W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.5 10 GHz 10V 8V 5V pF 8 7 Ccb 0.3 fT 3V 6 5 2V 0.2 4 1V 3 0.1 2 1 0.0 0 0.7V 2 4 6 8 V 11 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 dB 10V 3V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 dB 10V 16 15 14 12 11 10 5V 3V 2V G G 13 1V 9 8 12 11 10 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC IC 6 Jun-13-2001 BFR180W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 20 IC=1mA dB 0.9GHz dBm 12 12 1.8GHz 8 IP 3 G 10 0.9GHz 4 2V 8 1.8GHz 0 1V 6 -4 -8 4 -12 2 -16 -20 0 0 0 2 4 6 8 V 12 1 2 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 25 Power Gain |S21|2= f(f) V CE = Parameter 11 dB IC=1mA dB IC =1mA 9 8 S21 G 15 7 6 5 10 4 10V 2V 0.7V 10V 2V 0.7V 3 2 1 5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0 0.0 0.5 1.0 1.5 2.0 f 7
3 8V 5V 3V mA 5 IC 2.5 GHz 3.5 f Jun-13-2001