BFR181W_10

BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Parameter Marking RFs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Symbol RthJS 3=C Value Package SOT323 Unit Maximum Ratings at TA = 25 °C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 90 °C 12 20 20 2 20 2 175 150 -65 ... 150 Value ≤ 345 V mA mW °C Junction temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-10-08 BFR181W Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V, pulse measured hFE 70 100 140 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 2010-10-08 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz 1G 2G Unit max. 0.45 GHz pF typ. 8 0.29 fT Ccb 6 - Cce - 0.22 - Ceb - 0.35 - NFmin Gms 0.9 1.2 19 - dB dB Gma - 13.5 - dB |S21e|2 15.5 10 - dB ms = |S21 / S12| 1/2 ma = |S21e / S12e | (k-(k²-1) ) 3 2010-10-08 BFR181W Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 200 mW 10 3 160 K/W 120 100 80 60 40 20 0 0 RthJS 10 2 140 Ptot 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 20 40 60 80 100 120 °C 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 2 P totmax/PtotDC - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2010-10-08 Package SOT323 BFR181W Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 5 2010-10-08 BFR181W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2010-10-08