BFR182T

BFR182T NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA


2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR182T Maximum Ratings Parameter Marking RGs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 35 4 250 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1) -65 ... 150 -65 ... 150
300 K/W 1 Aug-09-2001 BFR182T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR182T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 16 10 IC = 10 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.33 0.18 0.6 max. 0.5 - Unit GHz pF dB 1.2 1.9 20 - Gma - 13 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3 Aug-09-2001 BFR182T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA - fF ps mA V ns V deg fF - V fF V eV K - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = C4 C1 L2 B L3 C 0.762 0.706 0.382 62 84 180 7 40 48 L2 = L3 = C1 C’ B’ Transistor Chip E’ C2 C3 C4 = C5 = C6 = C6 C2 L1 C3 C5 fF fF E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001
nH nH nH fF fF fF

BFR182T Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFR182T Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.6 GHz pF 9 10V 8V 7 0.4 6 5V Ccb fT 3V 5 0.3 4 0.2 3 2 0.1 1 0 0 0 0 2V 1V 0.7V 5 10 15 V 25 5 10 15 20 mA 30 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 10V 5V dB 10V 5V 3V dB 3V G 16 G ma 2V 2V 9 13 1V 6 1V 10 3 7 0 4 8 12 16 20 24 mA 32 0 0 4 8 12 16 20 24 mA 32 IC IC 6 Aug-09-2001 BFR182T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 22 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=10mA 0.9GHz 30 8V 5V dBm 18 16 0.9GHz IP 3 G 14 12 10 8 6 4 2 0 0 3 6 1.8GHz 20 1.8GHz 15 10 1V 5 V 12 0 0 5 10 15 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 30 IC=10mA dBm IC =10mA 35 20 30 G S21 25 20 15 15 10 5 10 5 0 0 10V 5V 1V 0 1 2 3 4 5 GHz 7 -5 0 1 2 3 4 f 7
3V 2V 20 mA 30 IC 10V 5V 1V 5 GHz 7 f Aug-09-2001