BFR183

BFR183 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA


2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183 Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 60 °C 1)
200 K/W 1 Aug-09-2001 BFR183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 14 8.5 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Unit max. 0.6 dB GHz pF typ. 8 0.4 0.2 1 fT Ccb Cce Ceb F 6 - Gma - 1.2 2 - 16.5 11 - = |S21 / S12 | (k-(k2-1)1/2 )
3 Aug-09-2001 BFR183 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA - fF ps mA V ns V deg fF - V fF V eV K - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001
nH nH nH nH nH nH fF

BFR183 Total power dissipation Ptot = f (TS ) 500 mW 400 350 300 250 200 150 100 50 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFR183 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.1 pF 9 GHz 10V 5V 0.9 7 0.8 Ccb 6 fT 0.7 0.6 0.5 0.4 0.3 3V 5 2V 4 3 2 1V 0.7V 0.2 0.1 0.0 0 4 8 12 16 V 1 0 0 22 5 10 15 20 25 30 35 mA 45 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 10V dB 3V dB 16 10V 3V 2V 8 G 14 2V G 6 12 4 10 1V 0.7V 1V 8 0.7V 2 6 0 5 10 15 20 25 30 35 mA 45 0 0 5 10 15 20 25 30 35 mA 45 IC IC 6 Aug-09-2001 BFR183 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 32 IC=15mA dB 0.9GHz dBm 28 0.9GHZ 26 14 G IP 3 24 22 3V 12 1.8GHz 20 2V 10 1.8GHz 18 16 8 14 1V 6 12 10 4 0 2 4 6 8 V 12 8 0 5 10 15 20 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 30 dB IC=15mA IC =15mA 26 24 22 24 22 S21 20 18 16 14 12 10 8 G 20 18 16 14 12 10 8 6 4 2 0.0 0.5 1.0 1.5 2.0 2.5 10V 1V 0.7V 6 4 2 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 7
8V 5V 25 30 mA 40 IC 10V 1V 0.7V GHz 3.5 f Aug-09-2001