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BFR183T

BFR183T

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BFR183T - NPN Silicon RF Transistor - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BFR183T 数据手册
BFR183T NPN Silicon RF Transistor Preliminary data For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA    2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 65 5 250 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 83°C 1) -65 ... 150 -65 ... 150  270 K/W 1 Aug-22-2001 BFR183T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-22-2001 BFR183T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 15.5 10 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.4 0.18 1 max. 0.6 - Unit GHz pF dB 1.2 2 19.5 - Gma - 12.5 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)  3 Aug-22-2001 BFR183T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA - fF ps mA V ns V deg fF - V fF V eV K - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.762 0.706 0.382 62 84 180 7 40 48 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-22-2001  nH nH nH fF fF fF   BFR183T Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 -6 -5 -4 -3 -2 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 10 10 10 10 s 10 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-22-2001 BFR183T Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1 GHz pF 9 10V 8V 7 5V Ccb 6 0.6 fT 3V 5 4 0.4 3 1V 2V 0.2 2 1 0.7V 0 0 5 10 15 V 25 0 0 5 10 15 20 25 30 35 40 mA 50 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 10V dB 10V 5V dB 5V 3V G 16 3V G ma 9 2V 2V 13 6 1V 10 1V 3 7 0 5 10 15 20 25 30 35 40 mA 50 0 0 5 10 15 20 25 30 35 40 mA 50 IC IC 6 Aug-22-2001 BFR183T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 21 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=15mA dB 0.9GHz 30 dBm 0.9GHz 15 IP 3 1.8GHz 20 2V G 12 1.8GHz 15 9 1V 10 6 3 5 0 0 3 6 V 12 0 0 5 10 15 20 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 35 IC=15mA dBm IC =15mA 35 30 25 S21 G 20 25 15 20 10 15 10 5 0 0 5 10V 5V 1V 1 2 3 4 5 GHz 0 1V 7 -5 0 1 2 3 4 f 7  8V 5V 3V 25 30 mA 40 IC 10V 5V 5 GHz 7 f Aug-22-2001
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