BFR193

BFR193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA



2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Maximum Ratings Parameter Marking RCs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value 12 20 20 2 80 10 580 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 69 °C 1) -65 ... 150 -65 ... 150
140 K/W 1 Aug-09-2001 BFR193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz 1G ma Symbol min. fT Ccb Cce Ceb F Gma |S21e|2 , 6 - Values typ. 8 0.68 0.24 1.8 max. 1 - Unit GHz pF dB 1.3 2.1 - 14.5 9 - = |S21 / S12 | (k-(k2-1)1/2 )
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 12.5 7 - 3 Aug-09-2001 BFR193 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.11 300 fA fA mA V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.43 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001


BFR193 Total power dissipation Ptot = f (TS ) 600 mW P tot 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 3 K/W Ptotmax / PtotDC - 10 2 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFR193 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.3 pF GHz 9 1.1 1 7 8V 5V 3V Ccb 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 6 fT 2V 5 4 1V 3 0.7V 2 1 0.1 0 0 4 8 12 16 V 22 0 0 10 20 30 40 50 60 70 mA 85 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 16 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 10 dB 8V dB 8V 3V 8 3V G 12 2V G 7 2V 6 10 5 1V 4 1V 8 3 0.7V 0.7V 6 0 10 20 30 40 50 60 70 mA 85 2 0 10 20 30 40 50 60 70 mA 85 IC IC 6 Aug-09-2001 BFR193 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 dB 0.9GHz Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=30mA 0.9GHz 38 dBm 8V 34 32 12 G IP 3 30 28 26 24 3V 10 1.8GHz 8 1.8GHz 22 6 20 18 4 16 14 2 0 1 2 3 4 5 6 7 8 V 1V 2V 10 12 0 10 20 30 40 50 60 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 Power Gain |S21|2= f(f) V CE = Parameter 30 IC=30mA dB dB IC =30mA 24 22 G 20 S21 18 16 14 12 10 8 10V 1V 6 4 0.7V 2 0 0 0.5 1 1.5 2 2.5 GHz 3.5 -2 0 0.5 1 1.5 2 f 7
5V 70 80 mA 100 IC 10V 1V 0.7V 2.5 GHz 3.5 f Aug-09-2001