BFR280

BFR280 NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m fT = 7.5 GHz F = 1.5 dB at 900 MHz
3 Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1
Junction - soldering point2)

2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR280 Maximum Ratings Parameter Marking REs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150 V mA mW °C 116 °C 1) RthJS 425 K/W Jun-27-2001 BFR280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFR280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz 1G ms Symbol min. fT Ccb Cce Ceb F Gms |S21e|2 , 5 - Values typ. 7.5 0.27 0.18 0.22 max. 0.45 - Unit GHz pF dB 1.5 2 - 17 11.5 - = |S21 / S12 |  IC = 3 mA, VCE = 5 V, ZS = ZL = 50 13 8 - 3 Jun-27-2001 BFR280 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.472 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 89.888 0.073457 20.238 0.012696 15 2.4518 0.70035 0.21585 0 0.30017 0 0 0.96275 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0801 15.596 0.83403 1.409 0.031958 6.989 0.69773 0.2035 252.99 0.19188 0.75 1.11 300 fA fA mA V V eV K V deg fF - fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-27-2001
nH nH nH nH nH nH fF

BFR280 Total power dissipation Ptot = f (TS ) 100 mW 80 70 60 50 40 30 20 10 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 K/W Ptotmax / PtotDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.1 0.2 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-27-2001 BFR280 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 0.4 pF 9.5 GHz 10V 8 0.3 7 8V 5V 3V Ccb 0.25 fT 6 2V 0.2 5 4 0.15 3 0.1 2 0.05 1 0 0 1V 0.7V 0 0 2 4 6 8 V 11 2 4 6 8 mA 11 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 13 dB dB 10V 10V 3V 5V 3V 2V 11 16 3V G 14 2V G 12 0.7V 10 9 8 1V 7 10 6 0.7V 8 0 2 4 6 8 mA 11 5 0 2 4 6 8 mA 11 IC IC 6 Jun-27-2001 BFR280 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=3mA 0.9GHz 20 dBm 16 15 0.9GHz 12 IP 3 14 G 8 1V 13 12 11 0 10 9 8 -8 7 6 0 2 4 6 8 V 1.8GHz 1.8GHz 4 -4 12 -12 0 2 4 6 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 28 dB Power Gain |S21|2= f(f) V CE = Parameter 20 IC=3mA dB IC =3mA 24 22 16 14 12 10 8 6 4 2 0 10V 1V 0.7V G 18 16 14 12 10 10V 8 1V 6 4 0 0.5 1 1.5 2 2.5 0.7V GHz S21 20 3.5 0.5 1 1.5 2 f 7
8V 5V 3V 2V 8 mA 11 IC 2.5 GHz 3.5 f Jun-27-2001