BFR280W

BFR280W NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m fT = 7.5 GHz F = 1.5 dB at 900 MHz
3 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1

2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR280W Maximum Ratings Parameter Marking REs 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT323 Value Unit 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS = 115 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance 8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150 V mA mW °C Junction - soldering point2) RthJS 435 K/W Jun-27-2001 BFR280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFR280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 14 9 IC = 3 mA, VCE = 5 V, ZS = ZL = 50 f = 900 MHz IC = 3 mA, VCE = 5 V 1G ms Symbol min. fT Ccb Cce Ceb F Gms Values typ. 7.5 0.27 0.18 0.22 max. 0.45 - Unit 5 - GHz pF dB 1.5 2 - - 17.5 13.5 - = |S21 / S12 |  3 Jun-27-2001 BFR280W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.472 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 89.888 0.073457 20.238 0.012696 15 2.4518 0.70035 0.21585 0 0.30017 0 0 0.96275 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0801 15.596 0.83403 1.409 0.031958 6.989 0.69773 0.2035 252.99 0.19188 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-27-2001
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BFR280W Total power dissipation Ptot = f (TS ) 100 mW 80 70 60 50 40 30 20 10 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 K/W Ptotmax / PtotDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-27-2001 BFR280W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 0.5 11 GHz pF 9 10V 8 8V 5V Ccb 0.3 fT 7 3V 6 2V 5 0.2 4 1V 3 0.1 2 1 0.0 0 2 4 6 8 V 0.7V 11 0 0 2 4 6 8 mA 11 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 14 dB dB 2V 10V 3V 2V 16 10 G 14 1V G 8 1V 12 0.7V 6 0.7V 10 4 8 2 6 0 2 4 6 8 mA 11 0 0 2 4 6 8 mA 11 IC IC 6 Jun-27-2001 BFR280W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 20 IC=3mA dB 0.9GHz dBm 12 14 0.9GHz 1.8GHz 2V IP 3 G 8 1V 12 4 10 1.8GHz 0 8 -4 6 -8 4 0 2 4 6 8 V 12 -12 0 2 4 6 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 20 IC=3mA dB IC =3mA dB 16 14 20 G S21 12 10 8 15 10 10V 0.7V 6 4 2 10V 1V 0.7V 5 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0 0.0 0.5 1.0 1.5 2.0 f 7
8V 5V 3V 8 mA 11 IC 2.5 GHz 3.5 f Jun-27-2001