BFR340F

BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR340F Parameter Marking FAs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ T Stg Symbol RthJS Value Package TSFP-3 Unit Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 110°C 6 15 15 2 20 2 75 150 -55 ... 150 Value ≤ 530 V mA mW °C Junction temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point 2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-05-17 BFR340F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 4 V, VBE = 0, TA = 25°C VCE = 10 V, VBE = 0, T A = 85°C Verified by random sampling Collector-base cutoff current VCB = 4 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 1 500 ICBO 1 30 ICES 1 2 30 50 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 2010-05-17 BFR340F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) 11 14 GHz Transition frequency fT IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, f = 100 MHz IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 1.9 GHz IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 2.4 GHz NFmin 0.9 1 1.2 dB Ceb 0.11 Cce 0.17 Ccb 0.21 0.4 pF 3 2010-05-17 BFR340F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Maximum power gain1) G max IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 100 MHz IC = 5 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 3 GHz Transducer gain IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω , f = 100 MHz IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz f = 3 GHz Third order intercept point at output 2) VCE = 3 V, I C = 5 mA, f = 100 MHz, ZS = ZL = 50Ω VCE = 3 V, I C = 5 mA, f = 1.8 GHz, ZS = ZL = 50Ω 1dB compression point at output VCE = 3V, IC = 5 mA, ZS = ZL = 50Ω, f = 100 MHz VCE = 3V, IC = 5 mA, ZS = ZL = 50Ω, f = 1.8 GHz 1G dB 28 16.5 13 dB 19 14 10 dBm 14 13 -3 -1 - |S 21e|2 IP 3 P-1dB - 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 4 2010-05-17 BFR340F Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 80 V 0.4 pF 60 0.3 50 Ccb 90 105 120 A 0.25 40 0.2 30 0.15 20 0.1 10 0.05 0 0 15 30 45 60 75 150 0 0 2 4 6 8 10 12 V 16 VCB Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 1.9GHz 28 dBm Transition frequency fT = ƒ(IC) f = 1GHz VCE = parameter 16 GHz 5V 20 16 IP3 12 3V fT 12 8 10 2V 8 4 0 -4 -8 -12 -16 0 2 4 6 8 mA IC 5V 3V 2.5V 2V 1.5V 1V 1V 6 0.75V 4 2 11 0 0 2 4 6 8 mA 12 IC 5 2010-05-17 BFR340F Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter 20 45 Ic=5mA dB 5V 3V Power Gain Gma, Gms = ƒ(f) VCE = parameter mA 16 2V 35 G G 30 14 1V 0.75V 25 12 20 5V 3V 2V 1V 0.75V 10 15 8 10 6 0 2 4 6 8 mA 12 5 0 0.5 1 1.5 2 2.5 3 GHz 4 IC f Insertion Power Gain |S21|² = ƒ(f) VCE = parameter 24 dB Ic=5mA Power Gain Gma, Gms = ƒ(VCE):  | S21|² = ƒ(VCE): - - - f = parameter 22 dB Ic = 5mA 0.9GHz 20 18 16 14 12 10 8 6 4 0 20 19 18 0.9GHz 1.8GHz G G 17 16 15 5V 3V 2V 1V 0.75V 14 13 12 11 1.8GHz 0.5 1 1.5 2 2.5 3 GHz 4 10 0 1 2 3 4 5 6 V 8 f VCE 6 2010-05-17 BFR340F Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter 24 dB 0.9GHz Noise figure F = ƒ(I C) VCE = 1.5V, ZS = ZSopt 20 18 1.8GHz 16 14 12 10 4GHz 2.4GHz 3GHz G 8 6 4 0 mA 2 4 6 8 10 14 IC Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 100MHz 28 dBm Noise figure F = ƒ(I C) VCE = 1.5V, f = 1.9GHz 20 16 IP3 12 8 4 0 -4 -8 -12 -16 0 2 4 6 8 mA IC 5V 3V 2.5V 2V 1.5V 1V 11 7 2010-05-17 BFR340F Noise figure F = ƒ(f) VCE = 1.5V, ZS=ZSopt, IC=Parameter Source impedance for min. noise figure vs. frequency VCE = 1.5V, I C=Parameter 8 2010-05-17 BFR340F SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR340F SPICE model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFR340F SPICE model reflects the typical DC- and RF-performance with high accuracy. 9 2010-05-17 Package TSFP-3 BFR340F Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 0.4 0.45 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 10 2010-05-17 BFR340F Datasheet Revision History: 17 May 2010 This datasheet replaces the revisions from 02 February 2010 and 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revisions: 02 February 2010 and 30 March 2007 Page Subject (changes since last revision) 1 Higher maximum collector and base currents, higher total power dissipation 2 Typical values for leakage currents included, maximum leakage currents reduced 3 Noise description at 100 MHz added 4 Gain and linearity description at 100 MHz added 5 Ptot curve adjusted to Ptot and ICmax changes 5-8 Curves for IP3 and noise at 100 MHz added 11 2010-05-17 BFR340F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2010-05-17