BFR360F_10

BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360F Parameter Marking FBs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ T Stg Symbol RthJS Value Package TSFP-3 Unit Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 98°C 6 15 15 2 35 4 210 150 -55 ... 150 Value ≤ 250 V mA mW °C Junction temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-05-20 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 4 V, VBE = 0 VCE = 10 V, VBE = 0, TA = 85°C Verified by random sampling Collector-base cutoff current VCB = 4 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 1 500 ICBO 1 30 ICES 1 2 30 50 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 2010-05-20 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 3 GHz Transducer gain IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz f = 3 GHz Third order intercept point at output 2) VCE = 3 V, I C = 15 mA, f = 1.8 GHz, ZS = ZL = 50Ω 1dB compression point at output IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 11 - 14 0.32 0.5 GHz pF Ccb Cce - 0.2 - Ceb - 0.4 - NFmin - 1 - dB G ma |S 21e|2 IP 3 13 9 24 dBm 15.5 11 dB P-1dB - 9 - 3 2010-05-20 BFR360F Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 240 mW 0.8 pF 180 0.6 150 Ccb 90 105 120 °C Ptot 0.5 120 0.4 90 0.3 60 0.2 30 0.1 0 0 15 30 45 60 75 150 0 0 2 4 6 8 10 12 V 16 TS VCB Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 1.8GHz 30 dBm Transition frequency fT = ƒ(IC) f = 1GHz VCE = parameter 17 GHz 14 5V 20 12 3V IP3 fT 15 10 8 2V 10 5 6V 4V 3V 2V 1V 1V 6 0.7V 4 2 0 0 0 -5 0 5 10 15 20 25 30 mA 40 5 10 15 20 25 30 mA 40 IC IC 4 2010-05-20 BFR360F Power gain Gma, Gms = ƒ(IC) f = 0.9GHz VCE = parameter 24 dB 5V Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter 18 22 21 20 3V 2V dB 5V 3V G 19 18 17 16 15 14 13 12 0 5 10 15 20 25 30 mA 0.7V 1V 14 G 2V 12 1V 10 0.7V 40 8 0 5 10 15 20 25 30 mA 40 IC IC Power Gain Gma, Gms = ƒ(f) VCE = parameter 49 dB Ic = 15mA Insertion Power Gain |S21|² = ƒ(f) VCE = parameter 36 dB Ic = 15mA 39 34 28 24 29 24 19 14 9 4 0 20 16 12 5V 2V 1V 0.7V G 5V 2V 1V 0.7V G 8 4 0 0 3.5 GHz 0.5 1 1.5 2 2.5 3 4.5 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f f 5 2010-05-20 BFR360F Power Gain Gma, Gms = ƒ(VCE):  | S21|² = ƒ(VCE): - - - f = parameter 24 dB Ic = 15mA 0.9GHz Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter 22 dB 0.9GHz 19 20 0.9GHz 18 17 G G 18 1.8GHz 16 15 14 1.8GHz 16 1.8GHz 14 13 12 2.4GHz 3GHz 12 11 10 10 9 8 4GHz 8 0 1 2 3 4 5 V 7 7 0 5 10 15 20 25 30 35 mA 45 VCE IC Noise figure NF = ƒ (IC ) VCE = 3V, f = 1,8 GHz 3 dB F50 Noise figure F = ƒ(f) VCE = 3V, ZS = ZSopt 2.4 2.2 2 NFmin F 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 mA 45 IC 6 2010-05-20 BFR360F Source impedance for min. noise figure vs. frequency VCE = 3 V +j50 +j25 +j100 +j10 2.4GHz 3GHz 1.8GHz 0.9GHz 0 10 25 4GHz 50 100 -j10 3mA 15mA -j25 -j50 -j100 7 2010-05-20 BFR360F SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 8 2010-05-20 Package TSFP-3 BFR360F Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 0.4 0.45 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 9 2010-05-20 BFR360F Datasheet Revision History: 20 May 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 1 Max. ratings refer to 25°C 1 Max. rating for TA removed 1 Lower max. rating for storage temperature TStg changed 2 Typical values for leakage currents included, maximum leakage current values reduced 6 Characteristic curve for NFmin vs. frequency included 10 2010-05-20 BFR360F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-05-20