BFR380F_10

BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380F Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ TA T Stg Symbol RthJS Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 95°C 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value ≤ 145 V mA mW °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-09-13 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 5 V, V BE = 0 VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 40 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 1 500 ICBO ICES 1 30 1000 30 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 2010-09-13 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz Power gain, maximum available 1) IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 40 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz f = 3 GHz Third order intercept point at output2) VCE = 3 V, I C = 40 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB compression point at output IC = 40 mA, VCE = 3V, f = 1.8 GHz ZS=ZL=50 Ω ZS = ZSopt, ZL = ZLopt 1G 11 - 14 0.5 0.7 GHz pF Ccb Cce - 0.2 - Ceb - 1 - NFmin G ma |S21e|2 IP 3 P-1dB 17 19.5 11 7 29 13.5 9.5 1.1 1.6 - dB dB dBm 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2010-09-13 BFR380F Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 400 mW 10 3 K/W 300 250 RthJS 10 2 Ptot 200 150 100 50 10 1 - 7 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 -6 -5 -4 -3 -2 0 0 0 15 30 45 60 75 90 105 120 °C 150 10 10 10 10 10 s 10 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 1 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 1.6 pF Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.2 Ccb -2 1 0.8 0.6 0.4 0.2 10 0 - 7 10 10 -6 10 -5 10 -4 10 -3 10 s 10 0 0 0 2 4 6 8 10 12 V 16 tp VCB 4 2010-09-13 BFR380F Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 1.8GHz 32 dBm 28 26 24 4V 3V Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 900 MHz IP3 22 20 18 16 14 12 10 8 6 4 0 10 20 30 40 50 60 2V 1V 70 mA 90 IC Transition frequency fT= ƒ(IC) f = 1GHz VCE = parameter 16 GHz Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter 15 dB 14 13 12 5V 3V 2V 5V 13 3V fT 11 10 9 8 7 6 1V G 12 2V 11 10 0.7V 1V 9 8 5 4 0 10 20 30 40 50 60 70 80 mA 100 7 0 10 20 30 40 50 60 70 0.7V 80 mA 100 IC IC 5 2010-09-13 BFR380F Power Gain Gma, Gms = ƒ(f) VCE = parameter 45 dB Ic = 40mA dB Power Gain |S21|² = ƒ(f) VCE = parameter 40 Ic = 40mA 35 30 30 25 20 5V 2V 1V 0.7V G G 25 20 5V 2V 1V 0.7V 15 15 10 5 0 0 10 5 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f f Power Gain Gma, Gms = ƒ(VCE):  |S21|² = ƒ(VCE): - - - f = parameter 21 dB Ic = 40mA 19 18 17 16 0.9GHz 0.9GHz Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter 22 dB 0.9GHz 19 17 G G 15 14 1.8GHz 15 13 13 12 11 10 9 8 7 0 1 2 3 4 5 6 V 1.8GHz 1.8GHz 2.4GHz 3GHz 11 9 7 4GHz 8 5 0 20 40 60 80 mA 120 VCE IC 6 2010-09-13 BFR380F Minimum noise figure NF min = ƒ(IC) VCE = 3V, ZS = ZSopt Noise figure F = ƒ(I C) VCE = 3V, f = 1.8 GHz 3.5 4 3 3.5 3 2.5 2.5 2 F [dB] F [dB] 2 1.5 1.5 f = 4GHz ZS = 50Ω ZS = ZSopt 1 f = 3GHz f = 2.4GHz f = 1.8GHz 1 0.5 f = 0.9GHz 0.5 0 0 10 20 30 40 Ic [mA] 0 50 60 70 80 0 10 20 30 40 Ic [mA] 50 60 70 80 Minimum noise figure NF min = ƒ(f) VCE = 3V, ZS = ZSopt Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 8.0mA/40.0mA 7 2010-09-13 BFR380F SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR380F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR380F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2010-09-13 Package TSFP-3 BFR380F Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.45 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 9 2010-09-13 BFR380F Datasheet Revision History: 13 September 2010 This datasheet replaces the revision from 20 May 2010. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 20 May 2010 Page Subject (changes since last revision) 5 @ 900 MHz OIP3 curve added 8 SPICE model parameters removed from the datasheet, respective link to the internet site added 10 2010-09-13 BFR380F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-09-13