BFR380L3

BFR380L3

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BFR380L3 - NPN Silicon RF Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BFR380L3 数据手册
BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q101 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380L3 Parameter Marking FC Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ T Stg Symbol RthJS Value Package TSLP-3-1 Unit Maximum Ratings at TA = 25 °C, unless otherwise specified Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 96°C 6 15 15 2 80 14 380 150 -55 ... 150 Value ≤ 140 V mA mW °C Junction temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) 1T 2For K/W S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 1 2010-05-28 BFR380L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 5 V, VBE = 0 VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 40 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 10 500 ICBO ICES 1 30 1000 30 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 2010-05-28 BFR380L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum Noise figure IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available 1) IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 3 GHz Transducer gain IC = 40 mA, VCE = 3 V, Z S = ZL = 50Ω , f = 1.8 GHz f = 3 GHz Third order intercept point at output2) VCE = 3 V, I C = 40 mA, f = 1.8 GHz, ZS = ZL = 50Ω 1dB compression point at output IC = 40 mA, VCE = 3V, f = 1.8 GHz ZS = ZL = 50Ω ZS = ZSopt, ZL = ZLopt 1G 11 - 14 0.45 0.8 GHz pF Ccb Cce - 0.18 - Ceb - 1 - NFmin 0.5 1.1 2.1 dB G ma 11.5 7.5 |S 21e|2 9.5 5.5 IP 3 11.5 7.5 29.5 13.5 9.5 dBm 14 10 16.5 12.5 dB P-1dB 16 19.5 - 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2010-05-28 BFR380L3 SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR380L3 SPICE model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFR380L3 SPICE model reflects the typical DC- and RF-performance with high accuracy. 4 2010-05-28 Package TSLP-3-1 BFR380L3 Package Outline Top view Bottom view 0.6 ±0.05 0.5 ±0.035 0.65 ±0.05 1) 0.05 MAX. 3 2 1 ±0.05 3 1 2 1 2 x 0.25 ±0.035 0.45 1) Pin 1 marking 0.35 ±0.05 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.275 0.6 0.35 0.35 0.945 0.3 1 0.355 0.2 0.225 0.225 0.15 Copper Solder mask R0.1 0.2 0.17 Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 0.5 1.16 Pin 1 marking 0.76 8 0.315 0.25 ±0.035 0.4 +0.1 1) 5 2010-05-28 BFR380L3 Datasheet Revision History: 27 May 2010 This datasheet replaces the revisions from 10 July 2008 and 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revisions: 10 July 2008 and 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 2 Typical values for leakage currents included, values for maximum leakage currents reduced 6 2010-05-28 BFR380L3 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2010-05-28
BFR380L3
物料型号: - 型号:BFR380L3

器件简介: - BFR380L3是一款NPN硅射频晶体管,具有高电流能力和低噪声系数,适用于宽带宽动态范围。 - 低电压操作,适用于低相位噪声振荡器,最高可达3.5 GHz。 - 低噪声系数:1.8 GHz时为1.1 dB。 - 无铅(符合RoHS标准)封装。 - 根据AEC Q101标准进行RoHS认证。

引脚分配: - 引脚配置:1=B(基极),2=E(发射极),3=C(集电极)。 - 封装类型:TSLP-3-1。

参数特性: - 最大额定值(Ta=25°C): - 集电极-发射极电压:VCEO=6V,VCES=15V。 - 集电极-基极电压:VCBO=15V。 - 发射极-基极电压:VEBO=2V。 - 集电极电流:Ic=80mA。 - 基极电流:Ib=14mA。 - 总功耗(Ts≤96°C):Ptot=380mW。 - 结温:TJ=150°C。 - 存储温度:Tstq=-55°C至150°C。 - 热阻:Junction - 焊接点 RthJS≤ 140 K/W。

功能详解: - 直流特性: - 集电极-发射极击穿电压:V(BR)CEO=6V至9V。 - 集电极-发射极截止电流:ICES=1nA至1000nA。 - 集电极-基极截止电流:ICBO=30nA。 - 发射极-基极截止电流:IEBO=10nA至500nA。 - DC电流增益:hFE=90至160。 - 交流特性: - 过渡频率:fT=11GHz至14GHz。 - 集电极-基极电容:Ccb=0.45pF至0.8pF。 - 集电极-发射极电容:Cce=0.18pF至1pF。 - 发射极-基极电容:Ceb=1pF。 - 最小噪声系数:NFmin=0.5dB至2.1dB。 - 最大可用功率增益:Gma con=11.5至16.5。 - 传感器增益:IS1d2=9.5至13.5dB。 - 第三阶截取点:IP3=29.5dBm。 - 1dB压缩点:P-1dB=16至19.5。

应用信息: - 该晶体管适用于低相位噪声振荡器,最高可达3.5 GHz,并且由于其低噪声特性,适合于宽带宽动态范围的应用。

封装信息: - 封装类型为TSLP-3-1,这是一种无铅(符合RoHS标准)的封装。
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