BFR460L3_08

BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • SMD leadless package • Excellent ESD performance typical value 1500V (HBM) • High fT of 22 GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR460L3 Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS ≤ 108°C Junction temperature Marking AB Pin Configuration 1=B 2=E 3=C Symbol VCEO 4.5 4.2 VCES VCBO VEBO IC IB Ptot Tj T jo TA T stg 15 15 1.5 50 5 200 150 - ... -65 ... 150 -65 ... 150 Value Package TSLP-3-1 Unit V mA mW °C °C Operation junction temperature range Ambient temperature Storage temperature 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 1 2008-08-14 BFR460L3 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 210 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured 1For Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4.5 90 Values typ. 5.8 120 max. 10 100 1 160 Unit V µA nA µA - calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-08-14 BFR460L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz f = 3 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt , f = 3 GHz Transducer gain IC = 20 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1,8 GHz f = 3 GHz Third order intercept point at output2) VCE = 3 V, I C = 20 mA, f = 1.8 GHz 1dB Compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz 1/2 ma = |S 21 / S12 | (k-(k²-1) ), Gms = S 21 / S12  2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 16 - 22 0.28 0.45 GHz pF Ccb Cce - 0.14 - Ceb - 0.55 - F G ms 1.1 1.35 16.0 - dB dB G ma - 11 - dB |S 21e|2 IP 3 P-1dB 14 10 27 11.5 - dB dBm 3 2008-08-14 BFR460L3 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0.8 pF Transition frequency fT= ƒ(IC) f = 1 GHz VCE = parameter in V 26 GHz 2 to 4V 1V 22 0.6 20 18 Ccb 0.5 fT 16 14 12 0.4 0.3 10 0.2 8 6 0.1 4 0 0 2 4 6 8 10 V VCB 14 2 0 5 10 15 20 25 30 35 mA IC 45 Power gain Gma, Gms , |S 21|2 = ƒ (f) VCE = 3 V, I C = 20 mA 50 dB Power gain Gma, Gms = ƒ (I C) VCE = 3V f = parameter in GHz 24 dB 0.9 40 35 G G 20 18 16 14 12 |S21|² Gma 1.8 30 25 20 15 10 5 0 0 GHz f Gms 2.4 3 4 5 6 10 8 6 4 0 1 2 3 4 6 5 10 15 20 25 30 mA IC 40 4 2008-08-14 BFR460L3 Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz 24 dB 0.9 20 18 1.8 16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 V VCE 2.4 3 4 5 6 G 4.5 5 2008-08-14 Package TSLP-3-1 BFR460L3 Package Outline Top view Bottom view 0.6 ±0.05 0.5 ±0.035 0.65 ±0.05 1) 0.05 MAX. 3 2 1 ±0.05 3 1 2 1 2 x 0.25 ±0.035 0.45 1) Pin 1 marking 0.35 ±0.05 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.275 0.6 0.35 0.35 0.945 0.3 1 0.355 0.2 0.225 0.225 0.15 Copper Solder mask R0.1 0.2 0.17 Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 0.5 1.16 Pin 1 marking 0.76 8 0.315 0.25 ±0.035 0.4 +0.1 1) 6 2008-08-14 BFR460L3 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2008-08-14