BFR720L3RH

BFR720L3RH NPN Silicon Germanium RF Transistor Target data sheet • High gain ultra low noise RF transistor for low current operation • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Optimum gain and noise figure at low current operation • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz • High maximum stable and available gain Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz • 150 GHz fT-Silicon Germanium technology • Extremly small and flat leadless package height 0.32 mm max. • Pb-free (RoHS compliant) package • Qualified according AEC Q101 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR720L3RH Marking R3 Pin Configuration 1=B 2=C 3=E Package TSLP-3-9 1 2008-07-04 BFR720L3RH Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ tbd Operating junction temperature range Storage junction temperature range Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ tbd Unit K/W T jo T jstg -65 ... 150 -65 ... 150 °C VCES VCBO VEBO IC IB Ptot Symbol VCEO 4 3.5 13 13 1.2 20 2 80 mW mA Value Unit V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gainIC = 13 mA, VCE = 3 V, pulse measured 1T Symbol min. V(BR)CEO ICES ICBO IEBO hFE 4 160 Values typ. 4.7 250 max. 30 100 2 400 Unit V µA nA µA - S is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-07-04 BFR720L3RH Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 13 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , based grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, Z S = ZSopt Power gain1) IC = 13 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 13 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 13 mA, VCE = 3 V, Z S = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 10 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB Compression point IC = 13 mA, VCE = 3 V, Z S=ZL=50 Ω, f = 1.8 GHz 1G - 45 0.07 - GHz pF Ccb Cce - 0.26 - Ceb - 0.27 - NF G ms 0.5 0.8 24 - dB dB G ma - 16.5 - dB |S 21e|2 IP 3 P-1dB 22 13.5 20.5 6 - dB dBm 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz 3 2008-07-04 Package TSLP-3-9 BFR720L3RH Package Outline Top view 0.31+0.01 -0.02 Bottom view 0.6 ±0.05 0.5 ±0.035 1) 0.575 ±0.05 3 2 0.4 ±0.035 1) 1 3 1 2 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 R0.19 0.45 0.2 0.95 0.38 0.5 0.255 0.35 0.225 0.15 Copper 0.225 Solder mask 0.2 0.2 0.17 R0.1 Stencil apertures Marking Layout (Example) BFR705L3RH Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 1.2 0.35 Pin 1 marking 0.8 8 0.315 1 2 x 0.25 ±0.035 1) 1±0.05 4 2008-07-04 BFR720L3RH Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 2008-07-04