BFR740L3RH

BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, height 0.32 mm, ideal for modules • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications, including routers and access points • Based on Infineon's reliable high volume SiGe:C technology • Outstanding noise figure NFmin 0.5 dB at 1.8 GHz Outstanding noise figure NFmin 0.8 dB at 6 GHz • Accurate SPICE GP model enables effective design in process • High maximum stable and available gain Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz • Pb-free (RoHS compliant) package 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR740L3RH Marking R9 Pin Configuration 1=B 2=C 3=E Package TSLP-3-9 1 2010-09-08 BFR740L3RH Maximum Ratings Parameter Symbol VCEO Value Unit Collector-emitter voltage TA > 0°C TA ≤ 0°C V 4 3.5 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 99°C VCES VCBO VEBO IC IB Ptot TJ TA TStg Symbol RthJS 13 13 1.2 30 3 160 150 -65 ... 150 -65 ... 150 Value ≤ 320 Unit mA mW °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1T K/W S is measured on the emitter lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note AN077 Thermal Resistance Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 25 mA, VCE = 3 V, pulse measured 2 2010-09-08 Symbol min. V(BR)CEO ICES ICBO IEBO hFE 160 4 Values typ. 4.7 max. - Unit V µA 0.001 1 10 250 30 0.04 40 900 400 nA BFR740L3RH Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, IC = 25 mA, ZS =ZL =50 Ω, f = 1.8 GHz 1dB compression point at output IC = 25 mA, VCE = 3 V, ZS =ZL =50 Ω, f = 1.8 GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz 1G Unit max. 0.15 GHz pF typ. 42 0.09 fT Ccb - Cce - 0.18 - Ceb - 0.38 - NFmin Gms 0.5 0.8 24.5 - dB dB Gma - 15 - dB |S21e|2 IP3 P-1dB 22 12.5 25 11 - dB dBm 3 2010-09-08 BFR740L3RH Total power dissipation P tot = ƒ(TS) Permissible Puls Load RthJS = ƒ (t p) 180 160 140 120 RthJS [K/W] Ptot [mW] 100 2 10 80 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D=0 60 40 → tp ← D=tp /T 20 ←T 0 0 15 30 45 60 75 90 105 120 135 150 1 10 −7 10 −6 10 −5 10 −4 10 → −3 10 −2 10 −1 10 0 10 TS [°C] tp [s] Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 2 10 0.2 → tp ← D=tp /T 0.18 ←T → 0.16 0.14 0.12 Ptotmax/PtotDC 1 10 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 Ccb [pF] −2 10 −1 10 0 10 0.1 0.08 0.06 0.04 0.02 0 10 −7 10 −6 10 −5 10 −4 10 −3 10 0 0 2 4 6 8 10 12 tp [s] VCB [V] 4 2010-09-08 BFR740L3RH Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 1.8 GHz 30 50 Transition frequency fT = ƒ(IC) VCE = parameter, f = 2 GHz 2 V to 4V 27 4.00V 45 24 40 3.00V 21 35 18 30 IP3 [dBm] 15 fT [GHz] 25 2.00V 12 20 9 15 1.00V 6 10 1.00V 3 5 0.75V 0.50V 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 25 30 35 IC [mA] IC [mA] Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 25 mA Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter 45 34 32 40 30 35 28 0.90GHz 30 26 Gms 25 24 1.80GHz 2.40GHz 3.00GHz G [dB] G [dB] 20 22 |S21| 15 2 Gma 20 18 4.00GHz 5.00GHz 6.00GHz 16 10 14 5 12 0 0 1 2 3 4 5 6 10 0 5 10 15 20 25 30 35 f [GHz] IC [mA] 5 2010-09-08 BFR740L3RH Power gain Gma, Gms = ƒ (VCE ) IC = 25 mA f = parameter 36 Minimum noise figure NFmin = ƒ(IC) VCE = 3 V, f = parameter ZS = ZSopt 2 32 1.8 28 0.90GHz 1.6 f = 6GHz f = 5GHz f = 4GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 24 1.80GHz 2.40GHz 3.00GHz 1.4 1.2 F [dB] 5 20 G [dB] 4.00GHz 5.00GHz 16 1 6.00GHz 0.8 12 0.6 8 0.4 4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0 5 10 15 Ic [mA] 20 25 30 VCE [V] Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Minimum noise figure NFmin = ƒ(f) VCE = 3V, ZS = ZSopt 2 1.8 1.6 1.4 1.2 F [dB] Z = 50Ω S 1 ZS = ZSopt 0.8 0.6 0.4 0.2 0 0 5 10 15 Ic [mA] 20 25 30 6 2010-09-08 BFR740L3RH Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 8 mA / 25 mA 7 2010-09-08 BFR740L3RH SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR740L3RH SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR740L3RH SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2010-09-08 Package TSLP-3-9 BFR740L3RH Package Outline Top view 0.31+0.01 -0.02 Bottom view 0.6 ±0.05 0.5 ±0.035 1) 0.575 ±0.05 3 2 0.4 ±0.035 1) 1 3 1 2 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 R0.19 0.45 0.2 0.95 0.38 0.5 0.255 0.35 0.225 0.15 Copper 0.225 Solder mask 0.2 0.2 0.17 R0.1 Stencil apertures Marking Layout (Example) BFR705L3RH Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 1.2 0.35 Pin 1 marking 0.8 8 0.315 1 2 x 0.25 ±0.035 1) 1±0.05 9 2010-09-08 BFR740L3RH Datasheet Revision History: 8 September 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision 30 March 2007 Page Subject (changes since last revision) 1 2 4 6,7 AEC Q101 label removed Typical values for leakage currents included, values for maximum leakage currents reduced SPICE model parameters shifted from datasheet to the internet simulation data section NFmin and GammaOpt Charts updated 10 2010-09-08 BFR740L3RH Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-09-08