BFR92P

BFR92P NPN Silicon RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 (PNP)
3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR92P Maximum Ratings Parameter Marking GFs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value 15 20 20 2.5 30 4 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 48 °C 1) -65 ... 150 -65 ... 150
365 K/W 1 Aug-03-2001 BFR92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 µA ICBO 100 nA ICES 10 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Aug-03-2001 BFR92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F Ceb Cce Ccb fT Symbol min. 3.5 - Values typ. 5 0.38 0.2 0.7 max. 0.6 - Unit GHz pF dB 1.8 2.9 - Power gain, maximum available F) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz IC = 15 mA, VCE = 8 V 1G ma Gma |S21e|2 15 9.5 - = |S21 / S12 | (k-(k2-1)1/2)  IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , 12.5 7 - 3 Aug-03-2001 BFR92P SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.1213 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300 fA fA mA V V eV K V deg fF - fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-03-2001


BFR92P Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-03-2001 BFR92P Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.3 pF 1.1 1 6 GHz 5 4.5 5V Ccb 0.9 fT 4 3V 0.8 0.7 3.5 3 0.6 0.5 0.4 0.3 0.2 0.1 0 0 4 8 12 16 V 2V 2.5 2 1.5 1 0.5 22 0 0 5 10 15 20 25 mA 1V 0.7V 35 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 dB 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 10 dB 10V 5V 5V 3V 2V 14 12 7 6 5 3V G G 10 8 6 4 2V 4 3 2 1 1V 0 -1 -2 -3 1V 2 0 -2 -4 0 5 10 15 20 25 mA 0.7V -4 35 -5 0 5 10 15 20 25 mA 0.7V 35 IC IC 6 Aug-03-2001 BFR92P Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) = Parameter, f = 900MHz 1) V CE 26 dBm 5V 8V IC=15mA dB 0.9GHz 0.9GHz 22 3V 12 20 1.8GHz G 10 IP 3 18 2V 8 1.8GHz 16 14 12 6 4 10 2 8 V 1V 0 0 2 4 6 8 12 6 0 4 8 12 16 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 Power Gain |S21|2= f(f) V CE = Parameter 28 dB IC=15mA dB IC =15mA 22 24 20 S21 18 16 14 12 G 20 16 12 10 8 8 10V 6 4 10V 1V 0.7V 4 1V 0.7V 2 0 3.5 -2 0 0.5 1 1.5 2 2.5 0 0 0.5 1 1.5 2 2.5 GHz f 7
20 mA 28 IC GHz 3.5 f Aug-03-2001