BFR92T

BFR92T NPN Silicon RF Transistor Preliminary data For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T (PNP)
3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR92T Maximum Ratings Parameter Marking GFs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 15 20 20 2.5 30 4 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 69°C 1) -65 ... 150 -65 ... 150
290 K/W 1 Aug-08-2001 BFR92T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 µA ICBO 100 nA ICES 10 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Aug-08-2001 BFR92T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13.5 8 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Unit max. 0.6 dB GHz pF typ. 5 0.38 0.2 0.7 fT Ccb Cce Ceb F 3.5 - Gma - 1.8 2.9 - 16 10.5 - = |S21 / S12 | (k-(k2-1)1/2 )
3 Aug-08-2001 BFR92T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.1213 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = C4 C1 L2 B L3 C 0.762 0.706 0.382 62 84 180 7 40 48 L2 = L3 = C1 C’ B’ Transistor Chip E’ C2 C3 C4 = C5 = C6 = C6 C2 L1 C3 C5 fF fF E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-08-2001
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BFR92T Total power dissipation Ptot = f (TS ) 300 mW P tot 200 TS 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 10 -6 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-08-2001 BFR92T Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.8 6 GHz pF 8V Ccb 4 fT 5V 0.4 3 3V 2 2V 0.2 1 1V 0 0 5 10 15 V 25 0 0 5 10 15 20 25 mA 35 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 8V dB 8V dB 5V 14 G ma 5V 3V 6 3V G 10 2V 3 2V 6 0 2 -3 1V 1V -2 0 5 10 15 20 25 mA 35 -6 0 5 10 15 20 25 mA 35 IC IC 6 Aug-08-2001 BFR92T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 21 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 30 IC=15mA dB 0.9GHz dBm 5V 15 0.9GHz G 12 1.8GHz IP 3 20 15 1.8GHz 9 10 6 1V 3 5 0 0 3 6 V 12 0 0 5 10 15 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 35 IC=15mA IC =15mA dBm 35 25 30 S21 G 25 20 15 10 20 8V 5V 3V 2V 1V 15 10 5 5 0 -5 0 GHz 0 1 2 3 4 5 7 -5 0 1 2 3 4 f 7
3V 4V 2V 20 mA 30 IC 8V 5V 3V 2V 1V 5 GHz 7 f Aug-08-2001