BFR92W

BFR92W NPN Silicon RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W (PNP)
3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR92W Maximum Ratings Parameter Marking P1s 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT323 Value 15 20 20 2.5 30 4 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 86 °C 1) -65 ... 150 -65 ... 150
230 K/W 1 Aug-03-2001 BFR92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 µA ICBO 100 nA ICES 10 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Aug-03-2001 BFR92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz 1G ma Symbol min. fT Ccb Cce Ceb F Gma |S21e|2 , 3.5 - Values typ. 5 0.43 0.25 0.7 max. 0.6 - Unit GHz pF dB 1.8 2.9 - 15.5 10 - = |S21 / S12 | (k-(k2-1)1/2 )
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 13 7.5 - 3 Aug-03-2001 BFR92W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.1213 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300 fA fA mA V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-03-2001


BFR92W Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-03-2001 BFR92W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.8 GHz pF 6 5 4.5 10V Ccb 0.6 fT 4 3.5 3 3V 2V 0.5 2.5 2 1.5 1V 0.4 1 0.7V 0.5 0.3 0 4 8 12 16 V 22 0 0 5 10 15 20 25 mA 35 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 dB 10V 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 dB 3V 10V 5V 14 12 8 2V 3V 10 6 2V G 8 6 4 2 0 -2 -4 -6 0 5 10 15 20 25 mA 0.7V 1V G 4 2 0 -2 -4 -6 0 0.7V 1V 35 5 10 15 20 25 mA 35 IC IC 6 Aug-03-2001 BFR92W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) = Parameter, f = 900MHz 1) V CE 25 IC=15mA 0.9GHz 5V 0.9GHz dBm 3V 4V 14 12 G 1.8GHz IP 3 15 10 1.8GHz 8 10 6 4 2 0 0 0 0 1V 5 2 4 6 8 10 V 13 5 10 15 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 28 IC=15mA dB IC =15mA 26 20 22 S21 G 16 18 14 12 10 8 10V 3V 1V 10V 2V 1V 6 4 2 0.7V 0 0.7V -2 0 0.5 1 1.5 2 2.5 GHz 3.5 -4 0 0.5 1 1.5 2 f 7
2V 20 mA 30 IC 2.5 GHz 3.5 f Aug-03-2001