BFR93AT

BFR93AT NPN Silicon RF Transistor Preliminary data For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR93AT Maximum Ratings Parameter Marking R2s 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 50 6 300 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 85°C 1) -65 ... 150 -65 ... 150
215 K/W 1 Aug-09-2001 BFR93AT Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR93AT Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13.5 7.5 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Unit max. 0.9 dB GHz pF typ. 6 0.58 0.22 1.7 fT Ccb Cce Ceb F 4.5 - Gma - 2 3.3 - 15.5 10 - = |S21 / S12 | (k-(k2-1)1/2 )
3 Aug-09-2001 BFR93AT SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 8.6752 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 137.63 0.33395 59 0.015129 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.93633 2619.3 0.88761 0.70823 0.043806 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = C4 C1 L2 B L3 C 0.762 0.706 0.382 62 84 180 7 40 48 L2 = L3 = C1 = C’ B’ Transistor Chip E’ C2 = C3 = C4 = C5 = C7 = C6 C2 L1 C3 C5 fF fF E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001
nH nH nH fF fF fF


BFR93AT Total power dissipation Ptot = f (TS ) 350 mW 250 P tot 200 TS 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFR93AT Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.4 pF GHz 7 8V 5V 3V 2V 1 5 Ccb 0.8 fT 4 0.6 3 1V 0.4 2 0.2 1 0 0 5 10 15 V 25 0 0 10 20 30 40 mA 60 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 19 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 8V 5V dB 8V dB 3V 2V G 3V 2V 13 G ma 6 5V 1V 10 3 1V 7 0 10 20 30 40 mA 60 0 0 10 20 30 40 mA 60 IC IC 6 Aug-09-2001 BFR93AT Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 35 IC=30mA 0.9GHz dBm 5V 4V 0.9GHz 14 12 G 1.8GHz IP 3 25 3V 10 1.8GHz 8 20 6 4 2 0 0 10 0 2V 15 1V 3 6 V 12 10 20 30 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 45 dB Power Gain |S21|2= f(f) V CE = Parameter 36 IC=30mA dBm IC =30mA 35 24 30 G S21 25 20 15 10 5 0 0 18 8V 5V 3V 2V 1V 12 6 8V 5V 3V 2V 1V 0 1 2 3 4 5 GHz 7 -6 0 1 2 3 4 f 7
40 mA 60 IC 5 GHz 7 f Aug-09-2001