BFS17P

BFS17P NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1
Junction - soldering point 2)

2 1 VPS05161 Type BFS17P Maximum Ratings Parameter Marking MCs 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC ICM Ptot Tj TA Tstg Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation TS 55 °C 1) mA mW °C RthJS 340 K/W Jul-12-2001 BFS17P Electrical Characteristics a TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat hFE 20 20 70 0.1 150 0.4 IEBO ICBO 0.05 10 100 V(BR)CEO 15 typ. max. Unit V µA - V 2 Jul-12-2001 BFS17P Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz, Transducer gain f = 500 MHz Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, Third order intercept point F 3.5 5 Cobs 1.5 Cibo 1.45 Cce 0.25 Ccb fT 1 1.3 1.4 2.5 0.55 0.8 typ. max. Unit GHz pF dB IC = 14 mA, VCE = 5 V, ZS =ZSopt , ZL =ZLopt , f = 800 MHz
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
IC = 20 mA, VCE = 5 V, ZS = ZL = 50
ZS = 0 |S21e|2 , V01=V02 - 12.7 - - 100 - mV IP3 - 23 - dBm 3 Jul-12-2001 BFS17P Total power dissipation Ptot = f(TS) 320 mW 240 P tot 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jul-12-2001 BFS17P Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.3 pF 3.0 1.1 1.0 GHz 10V 5V 3V Ccb 0.9 0.8 0.7 2.0 fT 2V 1.5 0.6 0.5 0.4 0.3 1V 1.0 0.2 0.1 0.0 0 4 8 12 16 20 V 0.5 0.7V 26 0.0 0 5 10 15 20 mA 30 VCB IC 5 Jul-12-2001