BFS17P_07

BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation2) TS ≤ 55 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3) 1Pb-containing 2T 3For Marking MCs Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC I CM Ptot Tj TA T stg Symbol RthJS Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150 Value ≤ 340 Unit V mA mW °C Unit K/W package may be available upon special request S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-30 BFS17P Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gainIC = 2 mA, VCE = 1 V, pulse measured IC = 25 mA, VCE = 1 V, pulse measured Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat hFE 40 20 70 0.1 150 0.4 V IEBO ICBO 0.05 10 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 2007-03-30 BFS17P Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) GHz Transition frequency fT IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 2 mA, VCE = 5 V, ZS = 50 Ω, f = 800 MHz Transducer gain IC = 20 mA, VCE = 5 V, Z S = ZL = 50Ω, f = 500 MHz Third order intercept point at output VCE = 5 V, I C = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt 1dB Compression point IC = 20 mA, VCE = 5 V, Z S = ZL = 50Ω, f = 800 MHz P-1dB 10 IP3 21.5 dBm |S21e|2 13 dB F 3.5 5 dB Ceb 0.9 1.45 Cce 0.27 Ccb 1 1.3 1.4 2.5 0.55 0.8 pF 3 2007-03-30 BFS17P Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 320 10 3 mW K/W 240 200 RthJS 10 2 Ptot 160 120 80 40 10 1 -7 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) f = 1 MHz 1.2 pF Ptotmax /PtotDC 1 CCB, CEB - 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 CCB CEB 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 12 14 16 V 20 tp VCB, VEB 4 2007-03-30 BFS17P Transition frequency fT = ƒ(IC) VCE = parameter 3 10V 5V 3V GHz 2 fT 2V 1.5 1 1V 0.5 0.7V 0 0 5 10 15 20 mA 30 IC 5 2007-03-30 Package SOT23 BFS17P Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 6 2007-03-30 BFS17P Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-03-30