BFS17S

BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 5 6 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA

2 C1 6 E2 5 B2 4 3 1 VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 Type BFS17S Maximum Ratings Parameter Marking MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC ICM Ptot Tj TA Tstg Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation TS 93 °C 1) mA mW °C
240 K/W 1 Aug-20-2001 BFS17S Electrical Characteristics a TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat hFE 20 20 70 0.1 150 0.4 IEBO ICBO 0.05 10 100 V(BR)CEO 15 typ. max. Unit V µA - V 2 Aug-20-2001 BFS17S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz, Transducer gain F Cobs Cibo Cce Ccb fT Symbol min. Values typ. max. Unit GHz 1 1.3 1.4 2.5 0.55 0.13 1.45 3.5 0.8 1.5 5 dB pF Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, Third order intercept point f = 900 MHz IC = 200 mA, VCE = 8 V, ZS=ZSopt , ZL=ZLopt ,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
IC = 20 mA, VCE = 5 V, ZS = ZL = 50 f = 500 MHz
ZS = 0 |S21e|2 - 12,7 - , V01=V02 - 100 - mV IP3 - 23 - dBm 3 Aug-20-2001 BFS17S Total power dissipation Ptot = f (TS ) 300 mW 240 220 P tot 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Aug-20-2001 BFS17S Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.3 pF 3.0 1.1 1.0 GHz 10V 5V 3V Ccb 0.9 0.8 0.7 2.0 fT 2V 1.5 0.6 0.5 0.4 0.3 1V 1.0 0.2 0.1 0.0 0 4 8 12 16 20 V 0.5 0.7V 26 0.0 0 5 10 15 20 mA 30 VCB IC 5 Aug-20-2001