BFS17S_07

BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 5 6 1 2 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17S Maximum Ratings Parameter Marking Pin Configuration Package MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC I CM Ptot Tj TA T stg Symbol RthJS Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150 Value ≤ 240 Unit K/W mW °C mA Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation2) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3) 1Pb-containing 2T 3For package may be available upon special request S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note Thermal Resistance 2007-03-30 1 BFS17S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gainIC = 2 mA, VCE = 1 V, pulse measured IC = 25 mA, VCE = 1 V, pulse measured Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat hFE 40 20 70 0.1 150 0.4 V IEBO ICBO 0.05 10 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2007-03-30 2 BFS17S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) GHz Transition frequency fT IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 2 mA, VCE = 5 V, ZS = 50 Ω, f = 800 MHz Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 500 MHz Third order intercept point at output VCE = 5 V, I C = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt 1dB Compression point IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz P-1dB 11 IP3 22.5 dBm |S21e|2 14 dB F 3 5 dB Ceb 0.9 1.45 Cce 0.2 Ccb 1 1.3 1.4 2.5 0.55 0.8 pF 2007-03-30 3 BFS17S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 300 mW 10 3 K/W 240 220 10 2 Ptot 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 RthJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) f = 1 MHz 1.2 pF Ptotmax /PtotDC - 1 CCB, CEB 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 CCB CEB 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 12 14 16 V 20 tp VCB, VEB 2007-03-30 4 BFS17S Transition frequency fT = ƒ(IC) VCE = parameter 3 10V 5V 3V GHz 2 fT 2V 1.5 1 1V 0.5 0.7V 0 0 5 10 15 20 mA 30 IC 2007-03-30 5 Package SOT363 BFS17S Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 2007-03-30 6 BFS17S Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-03-30 7